Maximum Reverse Recovery Time

Trr

at 25°C,I

=4mA

100

nS

HVRT080

Features

High speed switching

Low VF

High surge resisitivity for CRT discharge

High reliability design

Ultra small pakage

Applications

Maximum Ratings and Characteristics

Absolute Maximum Ratings

Items

Repetitive Peak Renerse Voltage

Average Output Current

Suege Current

Junction Temperature

Allowable Operation Case Temperature

Symbols

Tc

Condition

10mS Sine-half wave

peak value

Ta=25°C,Resistive Load

30

125

100

-40 to +125

Units

kV

mA

°C

°C

°C

Electrical Characteristics (Ta=25°C Unless otherwise specified )

Items

Maximum Forward Voltage Drop

Maximum Reverse Current

Symbols

Conditions

Units

V

µA

µA

F

Junction Capacitance

Cj

Storage Temperature

is high reliability resin molded type high voltage

diode in small size package which is sealed a multilayed

mesa type silicon chip by epoxy resin.

HVRT080

Cathode Mark

29 min.

29 min.

8.0

o 3.0

o 0.6

Cathode Mark

Lot No.

8kV 30mA HIGH VOLTAGE DIODES

=0V,f=1MHz

1.0

HVRT

Type

Mark

HVRT080

HVRT080

20

20

2.0

3.0

8

X light Power supply

Laser

Voltage doubler circuit

Microwave emission power

pF

GETE ELECTRONICS CO.,LTD

Http://www.getedz.com

E-mail:sales@getedz.com

2012

HVCA

TM