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US3003 数据表(PDF) 2 Page - Unitpower Technology Limited

部件名 US3003
功能描述  P-Ch 30V Fast Switching MOSFETs
PDF  4 Pages
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制造商  UNITPOWER [Unitpower Technology Limited]
网页  http://www.unitpower.cn
标志 UNITPOWER - Unitpower Technology Limited

US3003 数据表(HTML) 2 Page - Unitpower Technology Limited

  US3003 Datasheet HTML 1Page - Unitpower Technology Limited US3003 Datasheet HTML 2Page - Unitpower Technology Limited US3003 Datasheet HTML 3Page - Unitpower Technology Limited US3003 Datasheet HTML 4Page - Unitpower Technology Limited  
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2
P-Ch 30V Fast Switching MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-30
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.022
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V , ID=-4A
---
26
32
m
Ω
VGS=-4.5V , ID=-2A
---
36
45
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-1.0
-1.5
-2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
4.6
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-24V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=-24V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-4A
---
15.8
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
13
26
Ω
Qg
Total Gate Charge (-4.5V)
VDS=-15V , VGS=-4.5V , ID=-4A
---
12.6
17.6
nC
Qgs
Gate-Source Charge
---
4.52
6.3
Qgd
Gate-Drain Charge
---
4.72
6.6
Td(on)
Turn-On Delay Time
VDD=-15V , VGS=-10V , RG=3.3Ω,
ID=-4A
---
4.8
9.6
ns
Tr
Rise Time
---
35
63.0
Td(off)
Turn-Off Delay Time
---
42
84
Tf
Fall Time
---
21
42.0
Ciss
Input Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
1345
1883
pF
Coss
Output Capacitance
---
194
272
Crss
Reverse Transfer Capacitance
---
158
221
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
VG=VD=0V , Force Current
---
---
-4.8
A
ISM
Pulsed Source Current
2,4
---
---
-24
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
trr
Reverse Recovery Time
IF=-4A , dI/dt=100A/µs , TJ=25℃
---
18.3
---
nS
Qrr
Reverse Recovery Charge
---
7.2
---
nC
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
US3003



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