3LP01SS

No.6648-1/7

Features

•

Low ON-resistance

•

High-speed switching

•

2.5V drive

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--30

V

Gate-to-Source Voltage

VGSS

±10

V

Drain Current (DC)

ID

--0.1

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

--0.4

A

Allowable Power Dissipation

PD

0.15

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

This product is designed to “ESD immunity < 200V

*”, so please take care when handling.

* Machine Model

Package Dimensions

unit : mm (typ)

7029A-003

Ordering number : EN6648B

62712 TKIM/32406PE MSIM TB-00002156/92500 TSIM TA-1981

3LP01SS

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network

Product & Package Information

• Package

: SSFP

• JEITA, JEDEC

: SC-81

• Minimum Packing Quantity : 8,000 pcs./reel

Packing Type: TL

Marking

Electrical Connection

SANYO Semiconductors

DATA SHEET

XA

1

2

3

TL

1 : Gate

2 : Source

3 : Drain

SANYO : SSFP

1

3

12

2

3

1.4

0 to 0.02

0.25

0.2

0.45

0.1

3LP01SS-TL-E

3LP01SS-TL-H