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ECH8674 数据表(PDF) 2 Page - Sanyo Semicon Device |
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ECH8674 数据表(HTML) 2 Page - Sanyo Semicon Device |
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2 / 7 page ![]() ECH8674 No. A1436-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --12 V Zero-Gate Voltage Drain Current IDSS1VDS=--8V, VGS=0V --1 μA IDSS2VDS=--12V, VGS=0V --10 μA Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=--6V, ID=--1mA --0.4 --1.3 V Forward Transfer Admittance | yfs | VDS=--6V, ID=--3A 4.8 8.1 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=--3A, VGS=--4.5V 31 41 mΩ RDS(on)2 ID=--1.5A, VGS=--2.5V 45 63 mΩ RDS(on)3 ID=--0.5A, VGS=--1.8V 66 95 mΩ Input Capacitance Ciss VDS=--6V, f=1MHz 660 pF Output Capacitance Coss 210 pF Reverse Transfer Capacitance Crss 155 pF Turn-ON Delay Time td(on) See specified Test Circuit. 7.4 ns Rise Time tr 57 ns Turn-OFF Delay Time td(off) 72 ns Fall Time tf 69 ns Total Gate Charge Qg VDS=--6V, VGS=--4.5V, ID=--5A 6.9 nC Gate-to-Source Charge Qgs 1.2 nC Gate-to-Drain “Miller” Charge Qgd 1.8 nC Diode Forward Voltage VSD IS=--5A, VGS=0V --0.83 --1.2 V Switching Time Test Circuit Ordering Information Device Package Shipping memo ECH8674-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P.G 50Ω G S D ID= --3A RL=2Ω VDD= --6V VOUT VIN 0V --4.5V VIN ECH8674 |
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