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L6480H 数据表(PDF) 31 Page - STMicroelectronics |
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L6480H 数据表(HTML) 31 Page - STMicroelectronics |
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31 / 73 page ![]() L6480 Functional description Doc ID 023278 Rev 3 31/73 events do not cause interrupts and the switch status information is at the user’s disposal (Table 32 Section 9.1.24). The switch input can be used by GoUntil and ReleaseSW commands as described in Section 9.2.10 and Section 9.2.11. If the SW input is not used, it should be connected to VDD. 6.15 Programmable gate drivers The L6480 integrates eight programmable gate drivers that allow the fitting of a wide range of applications. The following parameters can be adjusted: ● gate sink/source current (IGATE) ● controlled current time (tCC) ● turn-off overboost time (tOB). During turn-on, the gate driver charges the gate forcing an IGATE current for all the controlled current time period. At the end of the controlled current phase the gate of the external MOSFET should be completely charged, otherwise the gate driving circuitry continues to charge it using a holding current. This current is equal to IGATE for the low-side gate drivers and 1 mA for the high-side ones. During turn-off, the gate driver discharges the gate sinking an IGATE current for all the controlled current time period. At the beginning of turn-off an overboost phase can be added: in this case the gate driver sinks an IOB current for the programmed tOB period in order to rapidly reach the plateau region. At the end of the controlled current time the gate of the external MOSFET should be completely charged, otherwise the gate driving circuitry discharges it using the integrated Miller clamp. Figure 13. External switch connection AM12833v1 External Switch SW V DD |
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