DA6279B.001

24 April 2012

3 (9)

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Min

Max

Unit

Note

Supply Voltage

-0.3

3.6

V

Input Voltage

V

Storage Temperature

-55

150

Latchup Current Limit

±100

mA

Note: Operation at maximum conditions will not damage the part but performance can not be guaranteed.

Stresses beyond those listed may cause permanent damage to the device.

Note: This is a CMOS device and therefore it should be handled carefully to avoid any damage by static

voltages (ESD).

RECOMMENDED OPERATION CONDITIONS

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Note

Supply Voltage

2.6

2.8

3.6

V

Supply Voltage at EEPROM

Programming

T=+25°C. Note 1.

3.0

3.3

3.6

V

Operating Temperature

-40

25

+85

Crystal Pulling Sensitivity

S

24

44

ppm/pF

Crystal Load Capacitance

VC = 1.3V

9.2

pF

Crystal Rs

Rs

20

50

Note 1. The recommended condition for EEPROM programming is room temperature.