ACE93C46.56.66

Three-wire Serial EEPROM

VER 1.5

8

WRITE (WRITE):

The Write (WRITE) instruction contains the 8 or 16 bits of data to be written into the specified memory location. The

self-timed programming cycle, tWP, starts after the last bit of data is received at serial data input pin DI. The DO pin

outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250 ns (TCS). A

logic “0” at DO indicates that programming is still in progress. A logic “1” indicates that the memory location at the

specified address has been written with the data pattern contained in the instruction and the part is ready for further

instructions. A Ready/Busy status cannot be obtained if the CS is brought high after the end of the selftimed

programming cycle, TWP.

ERASE ALL (ERAL):

The Erase All (ERAL) instruction programs every bit in the m

emory array to the logic “1” state and is primarily used for

testing purposes. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a

minimum of 250 ns (TCS). The ERAL instruction is valid only at VCC = 5.0V ± 10%.

WRITE ALL (WRAL):

The Write All (WRAL) instruction programs all memory locations with the data patterns specified in the instruction.

The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250ns

(TCS). The WRAL instruction is valid only at VCC = 5.0V ± 10%.

ERASE/WRITE DISABLE (EWDS):

To protect against accidental data disturb, the Erase/Write Disable (EWDS) instruction disables all programming

modes and should be executed after all programming operations. The operation of the Read instruction is independent

of both the EWEN and EWDS instructions and can be executed at any time.

Timing Diagrams

Note: This is the minimum SK period.

Figure 1: Synchronous Data Timing