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AD645 数据表(PDF) 4 Page - Analog Devices

部件名 AD645
功能描述  Low Noise, Low Drift FET Op Amp
PDF  8 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

AD645 数据表(HTML) 4 Page - Analog Devices

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REV. B
–4–
AD645–Typical Characteristics (@ +25 C, 15 V unless otherwise noted)
100
1k
10k
100k
1.0
10
100
FREQUENCY – Hz
10
1M
0.1
1
Figure 7. Current Noise Spectral
Density vs. Frequency
1.0
10
100
SOURCE RESISTANCE –
Ω
1k
10 9
10 8
107
10 6
10 5
103
10 4
NOISE BANDWIDTH: 0.1 to 10Hz
Figure 10. Input Voltage Noise vs.
Source Resistance
0
1
23
45
WARM-UP TIME – Minutes
50
25
0
25
–
50
–
T = +25 C
A
V =
±15V
S
Figure 13. Change in Input Offset
Voltage vs. Warmup Time
1k
100
10
0
1
10
100
1k
10k
100k
FREQUENCY – Hz
Figure 8. Voltage Noise Spectral
Density vs. Frequency
10
15
20
25
5
100
10
0.1
0.01
CURRENT NOISE
VOLTAGE NOISE
TEMPERATURE – C
60
–
0
40
–
20
–
20
40
60
80
100 120 140
f = 1kHz
o
1
Figure 11. Voltage and Current
Noise Spectral Density vs.
Temperature
01
2
3
4
5
TIME FROM THERMAL SHOCK – Minutes
150
75
0
150
–
75
–
T
A = 25°C TO TA = 85°C
Figure 14. Change in Input Offset
Voltage vs. Time from Thermal
Shock
10
100
1k
10k
10
100
1000
FREQUENCY – Hz
1.0
100k
1
0.1
R = 10M
Ω
S
R = 1M
Ω
S
R = 100k
Ω
S
R = 100
Ω
S
Figure 9. Voltage Noise Spectral
Density vs. Frequency for Various
Source Resistances
100
1k
10k
100k
1.0
10
100
SOURCE RESISTANCE –
Ω
1M
10M
100M
1k
SOURCE
RESISTANCE
NOISE OF AD645
AND RESISTOR
RESISTOR NOISE
ONLY
Figure 12. Voltage Noise Spectral
Density @ 1 kHz vs. Source
Resistance
60
40
20
0
20
40
60
80
100
120 140
––
–
TEMPERATURE – C
10 9
–
10 10
–
10 11
–
10
12
–
10
13
–
10
14
–
10 9
–
10 10
–
10 11
–
10
12
–
10
13
–
10
14
–
INPUT
BIAS
CURRENT
INPUT
OFFSET
CURRENT
Figure 15. Input Bias and Offset
Currents vs. Temperature



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