CS1610/11/12/13

DS929F5

5

Notes:

defined in the VDD Supply Voltage section on page 4.

2. External circuitry should be designed to ensure that the ZCD current drawn from the internal clamp diode when it is forward biased

does not exceed specification.

3. The conductance is specified in Siemens (S or 1/

). Each LSB of the internal ADC corresponds to 250nS or one parallel 4M

resistor. Full scale corresponds to 256 parallel 4M

 resistors or 15.625k.

4.

Specifications are guaranteed by design and are characterized and correlated using statistical process methods.

5.

Second Stage Current Sense

Overcurrent Protection Threshold

-1.69

-

V

Sense Resistor Short Threshold

-200

-

mV

Peak Control Threshold

-1.4

-

V

Leading-edge Blanking

-550

-

ns

Delay to Output

--

100

ns

Second Stage Pulse Width Modulator

Minimum On Time

-

0.55

-

s

Maximum On Time

-

8.8

-

s

Minimum Switching Frequency

-625

-

Hz

Maximum Switching Frequency

-200

-

kHz

Second Stage Gate Driver

Output Source Resistance

-24

-



Output Sink Resistance

-11

-



Rise Time

(Note 5)

--

30

ns

Fall Time

(Note 5)

--

20

ns

Second Stage Protection

Overcurrent Protection (OCP)

-1.69

-

V

Overvoltage Protection (OVP)

-1.25

-

V

Open Loop Protection (OLP)

-200

-

mV

External Overtemperature Protection (eOTP), Boost Peak Current, Second Stage Frequency Gain

Pull-up Current Source – Maximum

-80

-

A

Conductance Accuracy

(Note 3)

--

±5



Conductance Offset

(Note 3)

-±250

-

nS

Current Source Voltage Threshold

-1.25

-

V

Internal Overtemperature Protection (iOTP)

Thermal Shutdown Threshold

(Note 4)

-135

-

ºC

Thermal Shutdown Hysteresis

(Note 4)

-14

-

ºC

Parameter

Condition

Symbol

Min

Typ

Max

Unit

GD OUT

GD

GND

CS

VDD

Buffer

TP

0.25nF

+15V

-15V