MJ802

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(1) (IC = 200 mAdc, RBE = 100 Ohms)

BVCER

100

—

Vdc

Collector–Emitter Sustaining Voltage(1) (IC = 200 mAdc)

VCEO(sus)

90

—

Vdc

Collector–Base Cutoff Current

(VCB = 100 Vdc, IE = 0)

(VCB = 100 Vdc, IE = 0, TC = 150_C)

ICBO

—

—

1.0

5.0

mAdc

Emitter–Base Cutoff Current (VBE = 4.0 Vdc, IC = 0)

IEBO

—

1.0

mAdc

ON CHARACTERISTICS(1)

DC Current Gain(1) (IC = 7.5 Adc, VCE = 2.0 Vdc)

hFE

25

100

—

Base–Emitter “On” Voltage (IC = 7.5 Adc, VCE = 2.0 Vdc)

VBE(on)

—

1.3

Vdc

Collector–Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)

VCE(sat)

—

0.8

Vdc

Base–Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)

VBE(sat)

—

1.3

Vdc

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

2.0

—

MHz

(1)Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.

IC, COLLECTOR CURRENT (AMP)

TJ = 175° C

3.0

IC, COLLECTOR CURRENT (AMP)

1.0

2.0

0.7

1.0

0.5

0.1

Figure 2. DC Current Gain

Figure 3. ‘‘On” Voltages

VBE(sat) @ IC/IB = 10

VCE = 2.0 V

25

°C

– 55

°C

TJ = 25°C

0.03

0.1

0.2 0.3 0.5

10

20 30

0.3

0.2

0.05

2.0 3.0 5.0

DATA SHOWN IS OBTAINED FROM PULSE TESTS

AND ADJUSTED TO NULLIFY EFFECT OF ICBO.

2.0

1.8

1.4

1.6

1.2

0

1.0

0.8

0.6

0.4

0.2

1.0

0.03

0.1

0.2 0.3 0.5

10

20 30

0.05

2.0 3.0 5.0

VBE @ VCE = 2.0 V

VCE(sat) @ IC/IB = 10

50

1.0

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

20

10

1.0

0.2

10

Figure 4. Active Region Safe Operating Area

100

5.0

2.0

0.5

0.1

20

2.0

3.0

100

50

30

SECONDARY BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATIONS TC = 25°C

PULSE DUTY CYCLE

≤ 10%

TJ = 200° C

100

µs

1.0 ms

5.0 ms

dc

The Safe Operating Area Curves indicate IC – VCE limits

below which the device will not enter secondary breakdown.

Collector load lines for specific circuits must fall within the

applicable Safe Area to avoid causing a catastrophic failure.

To insure operation below the maximum TJ, power tempera-

ture derating must be observed for both steady state and

pulse power conditions.