27291SL datasheet(6/20 Pages) FREESCALE

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RF Device Data

Freescale Semiconductor

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

TYPICAL CHARACTERISTICS — 860 MHz

IDS(Q) = 100 mA

Figure 4. Normalized VGS Quiescent versus

Case Temperature

3.3

2.1

2.3

2.2

VGS, GATE--SOURCE VOLTAGE (VOLTS)

Figure 5. Drain Current versus Gate--Source Voltage

2.4

VDD =50 Vdc

Note: Measured with both sides of the transistor tied together.

TC, CASE TEMPERATURE (°C)

1.06

1.05

1.04

1.02

1.01

1.03

0.99

0.98

0.97

0.96

0.95

0.94

100

--50

--25

1400 mA

1900 mA

2400 mA

VDD =50 Vdc

2.6

2.5

2.7

2.9

2.8

3.1 3.2

40 Vdc

30 Vdc

20 Vdc

10 Vdc

1000

020

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 6. Capacitance versus Drain--Source Voltage

100

Coss

Measured with ±30 mV(rms)ac @ 1 MHz

VGS =0 Vdc

Note: Each side of device measured separately.

Crss

Pin, INPUT POWER (dBm)

Figure 7. Pulsed CW Output Power versus

Input Power

P3dB = 59.0 dBm (794 W)

Actual

Ideal

P2dB = 58.8 dBm (759 W)

VDD =50 Vdc,IDQ = 1400 mA, f = 860 MHz

Pulse Width = 100 μsec, Duty Cycle = 10%

P1dB = 58.4 dBm (692 W)

Figure 8. Pulsed Power Gain and Drain Efficiency

versus Output Power

Pout, OUTPUT POWER (WATTS) PULSED

100

1000

ηD

Gps

VDD =50 Vdc,IDQ = 1400 mA

f = 860 MHz

Pulse Width = 100 μsec

Duty Cycle = 10%

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