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AOC2802 数据表(PDF) 2 Page - Alpha & Omega Semiconductors

部件名 AOC2802
功能描述  Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
PDF  5 Pages
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制造商  AOSMD [Alpha & Omega Semiconductors]
网页  http://www.aosmd.com
标志 AOSMD - Alpha & Omega Semiconductors

AOC2802 数据表(HTML) 2 Page - Alpha & Omega Semiconductors

  AOC2802 Datasheet HTML 1Page - Alpha & Omega Semiconductors AOC2802 Datasheet HTML 2Page - Alpha & Omega Semiconductors AOC2802 Datasheet HTML 3Page - Alpha & Omega Semiconductors AOC2802 Datasheet HTML 4Page - Alpha & Omega Semiconductors AOC2802 Datasheet HTML 5Page - Alpha & Omega Semiconductors  
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background image
Symbol
Min
Typ
Max
Units
BVSSS
20
V
1
TJ=55°C
5
IGSS
1
10
BVGSO
±12
V
VGS(th)
0.5
1
1.5
V
28
34
TJ=125°C
41
48
30
35
36
43
45
54
gFS
19
S
VFSS
0.6
1
V
Ciss
1000
1200
pF
Coss
152
pF
Crss
114
pF
Rg
1.5
k
tD(on)
284
ns
tr
900
ns
tD(off)
5
µs
tf
4.8
µs
Qg
10.4
nC
Note: Pulsed
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Turn-On Rise Time
Turn-Off DelayTime
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VSS=10V, f=1MHz,
VGS=4.0V, IS=3A, Test Circuit 4
Diode Forward Voltage
Note
m
Total Gate Charge
VG1S1=4.5V, VSS=10V, IS=6A
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Turn-On DelayTime
VSS=VGS IS=250µA, Test Circuit 3
VSS=20V, VGS=0V, Test Circuit 1
VGS=2.5V, IS=3A, Test Circuit 4
VGS=4.5V, IS=3A, Test Circuit 4
VGS=10V, VSS=10V, RL=1.5Ω, RGEN=6Ω ,
VGS=3.1V, IS=3A, Test Circuit 4
IS=1A,VGS=0V, Test Circuit 5
VSS=5V, IS=3A, Test Circuit 3
DYNAMIC PARAMETERS
VSS=0V, VGS= ±10V, Test Circuit 2
Source-Source Breakdown Voltage
IS=250µA, VGS=0V, Test Circuit 6
SWITCHING PARAMETERS
VGS=0V, VSS=0V, f=1MHz
Zero Gate Voltage Source Current
Gate leakage current
Forward Transconductance
Note
RSS(ON)
Gate-Source Breakdown Voltage
VSS=0V, IG=±250µA, Test Circuit 7
Static Source to Source On-Resistance
Note
Gate Threshold Voltage
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
µA
ISSS
Rev 4: Nov 2012
www.aosmd.com
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