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AOC2802 数据表(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOC2802 数据表(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 5 page ![]() Symbol Min Typ Max Units BVSSS 20 V 1 TJ=55°C 5 IGSS 1 10 BVGSO ±12 V VGS(th) 0.5 1 1.5 V 28 34 TJ=125°C 41 48 30 35 36 43 45 54 gFS 19 S VFSS 0.6 1 V Ciss 1000 1200 pF Coss 152 pF Crss 114 pF Rg 1.5 k Ω tD(on) 284 ns tr 900 ns tD(off) 5 µs tf 4.8 µs Qg 10.4 nC Note: Pulsed THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Turn-On Rise Time Turn-Off DelayTime Reverse Transfer Capacitance Gate resistance VGS=0V, VSS=10V, f=1MHz, VGS=4.0V, IS=3A, Test Circuit 4 Diode Forward Voltage Note m Ω Total Gate Charge VG1S1=4.5V, VSS=10V, IS=6A Turn-Off Fall Time Input Capacitance Output Capacitance Turn-On DelayTime VSS=VGS IS=250µA, Test Circuit 3 VSS=20V, VGS=0V, Test Circuit 1 VGS=2.5V, IS=3A, Test Circuit 4 VGS=4.5V, IS=3A, Test Circuit 4 VGS=10V, VSS=10V, RL=1.5Ω, RGEN=6Ω , VGS=3.1V, IS=3A, Test Circuit 4 IS=1A,VGS=0V, Test Circuit 5 VSS=5V, IS=3A, Test Circuit 3 DYNAMIC PARAMETERS VSS=0V, VGS= ±10V, Test Circuit 2 Source-Source Breakdown Voltage IS=250µA, VGS=0V, Test Circuit 6 SWITCHING PARAMETERS VGS=0V, VSS=0V, f=1MHz Zero Gate Voltage Source Current Gate leakage current Forward Transconductance Note RSS(ON) Gate-Source Breakdown Voltage VSS=0V, IG=±250µA, Test Circuit 7 Static Source to Source On-Resistance Note Gate Threshold Voltage Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions µA ISSS Rev 4: Nov 2012 www.aosmd.com Page 2 of 5 |
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