AOD400_08 datasheet(2/6 Pages) AOSMD

2 / 6 page

AOD400

Symbol

Min

Typ

Max

Units

BVDSS

0.002

TJ=55°C

IGSS

100

VGS(th)

0.7

1.1

1.5

ID(ON)

TJ=125°C

28.5

mΩ

40.5

mΩ

gFS

VSD

0.77

Ciss

857

1030

Coss

Crss

1.2

3.6

Ω

9.7

Qgs

1.63

Qgd

3.1

tD(on)

3.5

3.7

tD(off)

trr

Qrr

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On Rise Time

DYNAMIC PARAMETERS

Gate resistance

VGS=0V, VDS=0V, f=1MHz

VGS=10V, VDS=15V, ID=10A

VGS=10V, VDS=15V, RL=1.5Ω,

RGEN=6Ω

SWITCHING PARAMETERS

Body Diode Reverse Recovery Time

Total Gate Charge

Gate Drain Charge

Turn-On DelayTime

Gate Source Charge

Turn-Off DelayTime

Turn-Off Fall Time

mΩ

VGS=4.5V, ID=10A

IS=1A,VGS=0V

VDS=5V, ID=10A

VGS=2.5V, ID=3.5A

Forward Transconductance

Diode Forward Voltage

RDS(ON)

Static Drain-Source On-Resistance

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

Gate Threshold Voltage

VDS=VGS ID=250µA

VDS=24V, VGS=0V

VDS=0V, VGS= ±12V

Zero Gate Voltage Drain Current

Gate-Body leakage current

IF=10A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=4.5V, VDS=5V

VGS=10V, ID=10A

Reverse Transfer Capacitance

IF=10A, dI/dt=100A/µs

VGS=0V, VDS=15V, f=1MHz

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The Power

dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the

user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation

limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=175°C.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).

Rev 1 : Sep. 2008

Alpha & Omega Semiconductor, Ltd.

AOD400 数据表(PDF) 2 Page - Alpha & Omega Semiconductors

AOD400 数据表(HTML) 2 Page - Alpha & Omega Semiconductors

Html Pages

1 2 3 4 5 6

数据表下载