MBR20060CT datasheet(1/2 Pages) NAINA

部件名	MBR20060CT

功能描述	Silicon Schottky Diode, 200A

PDF	2 Pages

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制造商	NAINA [Naina Semiconductor ltd.]

网页	http://www.nainasemi.com

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Naina Semiconductor Ltd.

MBR20045CT thru

MBR200100CTR

1

D-95, Sector 63, Noida – 201301, India

•

Tel: 0120-4205450

•

Fax: 0120-4273653

sales@nainasemi.com

•

www.nainasemi.com

Silicon Schottky Diode, 200A

Features

•

Guard Ring Protection

•

Low forward voltage drop

•

High surge current capability

•

Up to 100V VRRM

Maximum Ratings (TJ = 25

oC unless otherwise specified)

Parameter

Symbol

Conditions

MBR20045CT

(R)

MBR20060CT

(R)

MBR20080CT

(R)

MBR200100C

T(R)

Units

Repetitive peak

reverse voltage

VRRM

45

60

80

100

V

RMS reverse voltage

VRMS

32

42

56

70

V

DC blocking voltage

VDC

45

60

80

100

V

Average forward

current

IF(AV)

TC ≤ 135

oC

200

A

Non-repetitive

forward surge

current, half sine-

wave

IFSM

TC = 25

oC

tp = 8.3 ms

1500

A

Electrical Characteristics (TJ = 25

oC unless otherwise specified)

Parameter

Symbol

Conditions

MBR20045CT

(R)

MBR20060CT

(R)

MBR20080CT

(R)

MBR200100C

T(R)

Units

DC forward voltage

VF

IF = 100 A

TJ = 25

oC

0.68

0.76

0.88

V

DC reverse current

IR

VR = 20 V

TJ = 25

oC

5

mA

VR = 20 V

TJ = 125

oC

200

Thermal Characteristics (TJ = 25

oC unless otherwise specified)

Parameter

Symbol

MBR20045CT

(R)

MBR20060CT

(R)

MBR20080CT

(R)

MBR200100C

T(R)

Units

Thermal resistance

junction to case

RthJ-C

0.5

oC/W

Operating, storage

temperature range

TJ , Tstg

- 40 to +175

oC

TWIN TOWER PACKAGE

类似零件编号 - MBR20060CT

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Micro Commercial Compon...	MBR20060CT	414Kb / 3P	200 Amp Rectifier 20 to 100 Volts Schottky Barrier
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