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NCP1653 数据表(PDF) 15 Page - ON Semiconductor

部件名 NCP1653
功能描述  Compact, Fixed-Frequency Continuous Conduction Mode PFC Controller
PDF  19 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

NCP1653 数据表(HTML) 15 Page - ON Semiconductor

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NCP1653, NCP1653A
http://onsemi.com
15
Figure 40. Self−biasing Scheme in Constant Output
Voltage Mode
V
C1
C2
out
Vin
VCC
When the NCP1653 circuit is required to be startup
independently from the second−stage converter, it is
recommended to use a circuit in Figure 41. When there is
no feedback current (IFB = 0 mA) applied to FB pin (Pin 1),
the NCP1653 VCC startup current is as low (50 mA
maximum). It is good for saving the current to charge the
VCC capacitor. However, when there is some feedback
current the startup current rises to as high as 1.5 mA in the
VCC < 4 V region. That is why the circuit of Figure 41 can
be implemented: a PNP bipolar transistor derives the
feedback current to ground at low VCC levels (VCC < 4 V)
so that the startup current keeps low and an initial voltage
can be quickly built up in the VCC capacitor. The values in
Figure 41 are just for reference.
Figure 41. Recommended Startup Biasing Scheme
180k
NCP1653
100uF
560k
Input
Output
1.5M
180k
180k
BC556
VCC Undervoltage Lockout (UVLO)
The device typically starts to operate when the supply
voltage VCC exceeds 13.25 V. It turns off when the supply
voltage VCC goes below 8.7 V. An 18 V internal ESD Zener
Diode is connected to the VCC pin (Pin 8) to prevent
excessive supply voltage. After startup, the operating range
is between 8.7 V and 18 V.
Thermal Shutdown
An internal thermal circuitry disables the circuit gate
drive and then keeps the power switch off when the junction
temperature exceeds 150
_C. The output stage is then
enabled once the temperature drops below typically 120
_C
(i.e., 30
_C hysteresis). The thermal shutdown is provided
to prevent possible device failures that could result from an
accidental overheating.
Output Drive
The output stage of the device is designed for direct drive
of power MOSFET. It is capable of up to
±1.5 A peak drive
current and has a typical rise and fall time of 88 and
61.5 ns with a 2.2 nF load.



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