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ADG609BN 数据表(PDF) 2 Page - Analog Devices |
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ADG609BN 数据表(HTML) 2 Page - Analog Devices |
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2 / 12 page ![]() ADG608/ADG609–SPECIFICATIONS REV. A –2– Parameter B Version T Version +25 C –40 °C to +25 C –55 C to Test Conditions/ +85 C +125 C Units Comments ANALOG SWITCH Analog Signal Range VSS to VDD VSS to VDD V RON 22 22 Ω typ –3.5 V < VS < +3.5 V, IS = –1 mA; 30 35 30 40 Ω max VDD = +4.5 V, VSS = –4.5 V; Test Circuit 1 ∆R ON 56 5 6 Ω max –3 V < VS < +3 V, IDS = –1 mA; VDD = +5 V, VSS = –5 V RON Match 2 3 2 3 Ω max VS = 0 V, IDS = –1 mA; VDD = +5 V, VSS = –5 V LEAKAGE CURRENTS VDD = +5.5 V, VSS = –5.5 V Source OFF Leakage IS (OFF) ±0.05 ±0.05 nA typ VD = ± 4.5 V, VS = 4.5 V; ±0.5 ±2 ±0.5 ±10 nA max Test Circuit 2 Drain OFF Leakage ID (OFF) ±0.05 ±0.05 nA typ VD = ± 4.5 V, VS = 4.5 V; ADG608 ±0.5 ±2 ±0.5 ±10 nA max Test Circuit 3 ADG609 ±0.5 ±1 ±0.5 ±5 nA max Channel ON Leakage ID, IS (ON) ±0.05 ±0.05 nA typ VS = VD = ± 4.5 V; ADG608 ±0.5 ±3 ±0.5 ±20 nA max Test Circuit 4 ADG609 ±0.5 ±1.5 ±0.5 ±10 nA max DIGITAL INPUTS Input High Voltage, VINH 2.4 2.4 V min Input Low Voltage, VINL 0.8 0.8 V max Input Current IINL or IINH ±1 ±1 µA max VIN = 0 or VDD CIN, Digital Input Capacitance 5 5 pF typ DYNAMIC CHARACTERISTICS 2 tTRANSITION 50 50 ns typ RL = 300 Ω, CL = 35 pF; 75 90 75 100 ns max VS1 = ± 3.5 V, VS8 = 3.5 V; Test Circuit 5 tOPEN 10 10 ns min RL = 300 Ω, CL = 35 pF; VS = +3.5 V; Test Circuit 6 tON (EN) 50 50 ns typ RL = 300 Ω, CL = 35 pF; 75 90 75 100 ns max VS = +3.5 V; Test Circuit 7 tOFF (EN) 30 30 ns typ RL = 300 Ω, CL = 35 pF; 45 60 45 75 ns max VS = +3.5 V; Test Circuit 7 Charge Injection 6 6 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; Test Circuit 8 OFF Isolation 85 85 dB typ RL = 1 kΩ, CL = 15 pF, f = 100 kHz; VS = 3 V rms; Test Circuit 9 Channel-to-Channel Crosstalk 85 85 dB typ RL = 1 kΩ, CL = 15 pF, f = 100 kHz; Test Circuit 10 CS (OFF) 9 9 pF typ CD (OFF) ADG608 40 40 pF typ ADG609 20 20 pF typ CD (ON) ADG608 54 54 pF typ ADG609 34 34 pF typ POWER REQUIREMENTS IDD 0.05 0.2 0.05 0.2 µA typ VIN = 0 V or VDD 0.2 2 0.2 2 µA max ISS 0.01 0.1 0.01 0.1 µA typ 0.1 1 0.1 1 µA max NOTES 1Temperature ranges are as follows: B Version: –40 °C to +85°C; T Version: –55°C to +125°C. 2Guaranteed by design, not subject to production test. Specifications subject to change without notice. DUAL SUPPLY1 (V DD = +5 V 10%, VSS = –5 V 10%, GND = 0 V, unless otherwise noted) |
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