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DS-CPC3701-R03

1

CPC3701

60V, Depletion-Mode, N-Channel

Vertical DMOS FET

Pb

Part #

Description

CPC3701C

N-Channel Depletion Mode FET, SOT-89 Pkg.

Cut-Tape, Available in Quantities of 200, 300,

400, 500, and 600

CPC3701CTR

N-Channel Depletion Mode FET, SOT-89 Pkg.

Tape and Reel (1000/Reel)

V

V

(BR)DGX

R

DS(on)

(max)

I

Package

60V

1



600mA

SOT-89

Applications

Features

Description

Ordering Information

Circuit Symbol

DS(on)

at Cold Temperatures

 max. at 25ºC

The CPC3701 is an N-channel, depletion mode, field

effect transistor (FET) that utilizes IXYS Integrated

Circuits Division’s proprietary third-generation vertical

DMOS process. The third-generation process realizes

world class, high voltage MOSFET performance

in an economical silicon gate process. Our vertical

DMOS process yields a robust device, with high input

impedance, for use in high-power applications. The

CPC3701 is a highly reliable FET device that has

been used extensively in our Solid State Relays for

industrial and security applications.

The CPC3701 has a minimum breakdown voltage of

60V, and is available in the SOT-89 package. As with

all MOS devices, the FET structure prevents thermal

runaway and thermal-induced secondary breakdown.

Package Pinout (SOT-89)

S

G

D

G

D

S

D