ET4N60-252-R datasheet(3/8 Pages) ESTEK

3 / 8 page

ET4N60

www.estek.com.cn

Version 0.2

26 Sep 2011

Electrical Characteristics (TC=25 °C unless otherwise noted )

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V,

ID = 250 uA

600

ΔBVDSS/

ΔTJ

Breakdown Voltage Temperature

coefficient

ID = 250 uA,

Referenced to

25 °C

0.6

V/°C

VDS = 600 V,

VGS = 0 V

IDSS

Drain-Source Leakage Current

VDS = 480 V,

TC = 125 °C

100

Gate-Source Leakage, Forward

VGS = 30 V,

VDS = 0 V

100

IGSS

Gate-source Leakage, Reverse

VGS = -30 V,

VDS = 0 V

-100

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS,

ID = 250 uA

2.0

4.0

RDS(ON)

Static Drain-Source

On-state Resistance

VGS = 10 V,

ID = 2.0 A

2.0

2.5

Ω

Dynamic Characteristics

Ciss

Input Capacitance

545

710

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VGS = 0 V,

VDS =25 V,

f = 1 MHz

Dynamic Characteristics

td(on)

Turn-on Delay Time

Rise Time

td(off)

Turn-off Delay Time

100

Fall Time

VDD = 300 V,

ID = 4.0 A,

RG =25 Ω

Pulse Width ≤ 300us,

Total Gate Charge

Qgs

Gate-Source Charge

2.8

Qgd

Gate-Drain Charge(Miller Charge)

VDS = 480 V,

VGS = 10 V,

ID = 4.0 A

6.2

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