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AMP01AX/883C 数据表(PDF) 6 Page - Analog Devices |
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AMP01AX/883C 数据表(HTML) 6 Page - Analog Devices |
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6 / 22 page ![]() AMP01 –6– REV. D WAFER TEST LIMITS (@ V S = 15 V, RS = 10 k , RL = 2 k , TA = +25 C, unless otherwise noted) AMP01NBC AMP01GBC Parameter Symbol Conditions Limit Limit Units Input Offset Voltage VIOS 60 120 µV max Output Offset Voltage VOOS 4 8 mV max Offset Referred to Input PSR V+ = +5 V to +15 V dB min vs. Positive Supply G = 1000 120 110 dB min G = 100 110 100 dB min G = 10 95 90 dB min G = 1 75 70 dB min Offset Referred to Input PSR V– = –5 V to –15 V dB min vs. Negative Supply G = 1000 105 105 dB min G = 100 90 90 dB min G = 10 70 70 dB min G = 1 50 50 dB min Input Bias Current IB 48 nA max Input Offset Current IOS 13 nA max Input Voltage Range IVR Guaranteed by CMR Tests ±10 ±10 V min Common Mode Rejection CMR VCM = ±10 V dB min G = 1000 125 115 dB min G = 100 120 110 dB min G = 10 100 95 dB min G = 1 85 75 dB min Gain Equation Accuracy G = 20 × R S R G 0.6 0.8 % max Output Voltage Swing VOUT RL = 2 kΩ± 13 ±13 V min VOUT RL = 500 Ω±13 ±13 V min VOUT RL = 50 Ω±2.5 ±2.5 V min Output Current Limit Output to Ground Short ±60 ±60 mA min Output Current Limit Output to Ground Short ±120 ±120 mA max Quiescent Current IQ +V Linked to +VOP 4.8 4.8 mA max –V Linked to –VOP 4.8 4.8 mA max NOTE Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing. VIOS NULL RGAIN RSCALE VOOS NULL R1 47.5k R2 2.5k R4 2.5k R3 47.5k A1 A3 A2 Q1 Q2 250 250 –IN +IN REFERENCE V+ +VOP OUTPUT –VOP SENSE V– Figure 1. Simplified Schematic CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AMP01 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE |
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