DAC10GS datasheet(3/10 Pages) AD

3 / 10 page

–3–

REV. D

DAC10

WAFER TEST LIMITS

DAC10N

Parameter

Symbol

Conditions

Limit

Units

RESOLUTION

Bits min

MONOTONICITY

Bits min

NONLINEARITY

±0.5

LSB max

OUTPUT VOLTAGE COMPLIANCE

VOC

True 1 LSB

+10

V max

–5

V min

OUTPUT CURRENT RANGE

IFS

±3.996 mA

±18

µA max

ZERO-SCALE CURRENT

IZS

All Bits OFF

0.5

µA max

LOGIC INPUT “1”

VIH

IIN = 100 nA

V min

LOGIC INPUT “0”

VIL

VLC @ Ground

0.8

V max

IIN = –100

µA

POSITIVE SUPPLY CURRENT

I+

V+ = 15 V

mA max

NEGATIVE SUPPLY CURRENT

I–

V+ = –15 V

–15

mA max

NOTE: Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not

guaranteed for standard produce dice.

TYPICAL ELECTRICAL CHARACTERISTICS

DAC10F

Parameter

Symbol

Conditions

Typ

Units

SETTLING TIME

±1/2 LSB When Output Is Switched from 0 to FS

GAIN TEMPERATURE

COEFFICIENT (TC)

VREF Tempco Excluded

±10

ppm FS/

°C

OUTPUT CAPACITANCE

OUTPUT RESISTANCE

Ω

(@ VS =

15 V, IREF = 2 mA, TA = +25 C, unless otherwise noted. Output characteristics refer to both

IOUT and IOUT).

(@ VS =

15 V, IREF = 2 mA, unless otherwise noted. Output characteristics

refer to both IOUT and IOUT).

DICE CHARACTERISTICS

DIE SIZE 0.091

0.087 inch, 7,917 sq. mils

(2.311

2.210 mm, 5.107 sq. mm)

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