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CSD18502KCS 数据表(PDF) 4 Page - Texas Instruments

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部件名 CSD18502KCS
功能描述  40-V, N-Channel NexFET Power MOSFETs
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  TI [Texas Instruments]
网页  http://www.ti.com
标志 TI - Texas Instruments

CSD18502KCS 数据表(HTML) 4 Page - Texas Instruments

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0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
VGS = 4.5V
VGS = 10V
ID =100A
G001
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
0.5
0.8
1.1
1.4
1.7
2
2.3
2.5
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
ID = 250uA
G001
0
2
4
6
8
10
12
0
2
4
6
8
10
12
14
16
18
20
VGS - Gate-to- Source Voltage (V)
TC = 25°C Id = 100A
TC = 125ºC Id = 100A
G001
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
45
50
55
Qg - Gate Charge (nC)
ID = 100A
VDS = 20V
G001
10
100
1000
10000
50000
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
CSD18502KCS
SLPS367A – AUGUST 2012 – REVISED OCTOBER 2012
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 5. Gate Charge
Figure 6. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 7. Threshold Voltage vs. Temperature
Figure 8. On-State Resistance vs. Gate-to-Source Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 9. Normalized On-State Resistance vs. Temperature
Figure 10. Typical Diode Forward Voltage
4
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Copyright © 2012, Texas Instruments Incorporated
Product Folder Links: CSD18502KCS



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