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CSD18534KCS 数据表(PDF) 1 Page - Texas Instruments

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部件名 CSD18534KCS
功能描述  60-V, N-Channel NexFET Power MOSFETs
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  TI [Texas Instruments]
网页  http://www.ti.com
标志 TI - Texas Instruments

CSD18534KCS 数据表(HTML) 1 Page - Texas Instruments

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background image
0
4
8
12
16
20
24
28
32
0
2
4
6
8
10
12
14
16
18
20
VGS - Gate-to- Source Voltage (V)
TC = 25°C Id = 40A
TC = 125ºC Id = 40A
G001
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
18
20
Qg - Gate Charge (nC)
ID = 40A
VDS = 30V
G001
CSD18534KCS
www.ti.com
SLPS383 – SEPTEMBER 2012
60-V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD18534KCS
1
FEATURES
PRODUCT SUMMARY
2
Ultra Low Qg and Qgd
TA = 25°C
TYPICAL VALUE
UNIT
Low Thermal Resistance
VDS
Drain to Source Voltage
60
V
Avalanche Rated
Qg
Gate Charge Total (10V)
19
nC
Qgd
Gate Charge Gate to Drain
3.1
nC
Logic Level
VGS = 4.5V
10.2
m
Pb Free Terminal Plating
RDS(on)
Drain to Source On Resistance
VGS = 10V
7.6
m
RoHS Compliant
VGS(th)
Threshold Voltage
1.9
V
Halogen Free
TO-220 Plastic Package
ORDERING INFORMATION
Device
Package
Media
Qty
Ship
APPLICATIONS
TO-220 Plastic
CSD18534KCS
Tube
50
Tube
Package
DC-DC Conversion
Secondary Side Synchronous Rectifier
ABSOLUTE MAXIMUM RATINGS
Motor Control
TA = 25°C
VALUE
UNIT
VDS
Drain to Source Voltage
60
V
DESCRIPTION
VGS
Gate to Source Voltage
±20
V
The NexFET™ power MOSFET has been designed
Continuous Drain Current (Package limited),
100
to minimize losses in power conversion applications.
TC = 25°C
Continuous Drain Current (Silicon limited),
ID
71
A
TC = 25°C
Continuous Drain Current (Silicon limited),
45
TC = 100°C
IDM
Pulsed Drain Current (1)
108
A
PD
Power Dissipation
98
W
TJ,
Operating Junction and Storage
–55 to 150
°C
TSTG
Temperature Range
Avalanche Energy, single pulse
EAS
72
mJ
ID = 38A, L = 0.1mH, RG = 25Ω
(1) Pulse duration
≤300μs, duty cycle ≤2%
RDS(on) vs VGS
GATE CHARGE
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2012, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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