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MAT01GH 数据表(PDF) 2 Page - Analog Devices

部件名 MAT01GH
功能描述  Matched Monolithic Dual Transistor
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

MAT01GH 数据表(HTML) 2 Page - Analog Devices

  MAT01GH Datasheet HTML 1Page - Analog Devices MAT01GH Datasheet HTML 2Page - Analog Devices MAT01GH Datasheet HTML 3Page - Analog Devices MAT01GH Datasheet HTML 4Page - Analog Devices MAT01GH Datasheet HTML 5Page - Analog Devices MAT01GH Datasheet HTML 6Page - Analog Devices MAT01GH Datasheet HTML 7Page - Analog Devices MAT01GH Datasheet HTML 8Page - Analog Devices  
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REV. A
–2–
MAT01–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ V
CB = 15 V, IC = 10
A, TA = 25 C, unless otherwise noted.)
MAT01AH
MAT01GH
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Min
Units
Breakdown Voltage
BVCEO
IC = 100
µA45
45
V
Offset Voltage
VOS
0.04
0.1
0.10
0.5
mV
Offset Voltage Stability
First Month
VOS/Time
(Note 1)
2.0
2.0
µV/Mo
Long Term
(Note 2)
0.2
0.2
µV/Mo
Offset Current
IOS
0.1
0.6
0.2
3.2
nA
Bias Current
IB
13
20
18
40
nA
Current Gain
hFE
IC = 10 nA
590
430
IC = 10 µA
500
770
250
560
IC = 10 mA
840
610
Current Gain Match
∆h
FE
IC = 10
µA
0.7
3.0
1.0
8.0
%
100 nA
≤ I
C ≤ 10 mA
0.8
1.2
%
Low Frequency Noise
Voltage
en p-p
0.1 Hz to 10 Hz
3
0.23
0.4
0.23
0.4
µV p-p
Broadband Noise
Voltage
en rms
1 Hz to 10 kHz
0.60
0.60
µV rms
Noise Voltage
Density
en
fO = 10 Hz
3
7.0
9.0
7.0
9.0
nV/
√Hz
fO = 100 Hz
3
6.1
7.6
6.1
7.6
nV/
√Hz
fO = 1000 Hz
3
6.0
7.5
6.0
7.5
nV/
√Hz
Offset Voltage Change
∆V
OS/∆VCB
0
≤ V
CB ≤ 30 V
0.5
3.0
0.8
8.0
µV/V
Offset Current Change
∆I
OS/
∆V
CB
0
≤ V
CB
≤ 30 V
2
15
3
70
pA/V
Collector-Base
Leakage Current
ICBO
VCB = 30 V, IE = 0
4
15
50
25
200
pA
Collector-Emitter
Leakage Current
ICES
VCE = 30 V, VBE = 0
4, 5
50
200
90
400
pA
Collector-Collector
Leakage Current
ICC
VCC = 30 V
5
20
200
30
400
pA
Collector Saturation
VCE(SAT)
IB = 0.1 mA, IC = 1 mA
0.12
0.20
0.12
0.25
V
Voltage
IB = 1 mA, IC = 10 mA
0.8
0.8
V
Gain-Bandwidth Product
fT
VCE = 10 V, IC = 10 mA
450
450
MHz
Output Capacitance
COB
VCB = 15 V, IE = 0
2.8
2.8
pF
Collector-Collector
Capacitance
CCC
VCC = 0
8.5
8.5
pF
ELECTRICAL CHARACTERISTICS
MAT01AH
MAT01GH
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Min
Units
Offset Voltage
VOS
0.06
0.15
0.14
0.70
mV
Average Offset
Voltage Drift
TCVOS
(Note 6)
0.15
0.50
0.35
1.8
µV/°C
Offset Current
IOS
0.9
8.0
1.5
15.0
nA
Average Offset
Current Drift
TCIOS
(Note 7)
10
90
15
150
pA/
°C
Bias Current
ΙΒ
28
60
36
130
nA
Current Gain
hFE
167
400
77
300
Collector-Base
ICBO
TA = 125
°C, V
CB = 30 V,
Leakage Current
IE = 0
4
15
80
25
200
nA
Collector-Emitter
ICES
TA = 125
°C, V
CE = 30 V,
Leakage Current
VBE = 0
4, 6
50
300
90
400
nA
Collector-Collector
ICC
TA = 125°C, VCC = 30 V,
Leakage Current
(Note 6)
30
200
50
400
nA
(@ VCB = 15 V, IC = 10 A, –55 C
≤ T
A
≤ +125 C, unless otherwise noted.)



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