MAT03 datasheet(3/12 Pages) AD

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MAT03

–3–

REV. B

MAT03N

Parameter

Symbol

Conditions

Limits

Units

Breakdown Voltage

BVCEO

V min

Offset Voltage

VOS

IC = 100

µA, V

CB = 0 V

200

µV max

µA ≤ I

≤ 1 mA

200

µV max

Current Gain

hFE

IC = 1 mA, VCB = 0 V, –36 V

min

IC = 10

µA, V

CB = 0 V, –36 V

min

Current Gain Match

∆h

IC = 100

µA, V

CB = 0 V

% max

Offset Voltage Change vs. VCB

∆V

OS/∆VCB

VCB1 = 0 V, IC = 100 µA

200

µV max

VCB2 = –36 V

200

µV max

Offset Voltage Change

∆V

OS/

∆I

VCB = 0

µV max

vs. Collector Current

IC1 = 10 µA, IC2 = 1 mA

µV max

Bulk Resistance

rBE

µA ≤ I

≤ 1 mA

0.75

Ω max

Collector Saturation Voltage

VCE (SAT)

IC = 1 mA, IB = 100

µA

0.1

V max

NOTE:

Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed

for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.

WAFER TEST LIMITS (at 25 C, unless otherwise noted.)

DICE CHARACTERISTICS

SUBSTRATE CAN BE

CONNECTED TO V– OR

FLOATED

1. COLLECTOR (1 )

2. BASE (1 )

3. EMITTER (1 )

4. COLLECTOR (2)

5. BASE (2)

6. EMITTER (2 )

ABSOLUTE MAXIMUM RATINGS

Collector-Base Voltage (BVCBO) . . . . . . . . . . . . . . . . . . . . 36 V

Collector-Emitter Voltage (BVCEO) . . . . . . . . . . . . . . . . . . 36 V

Collector-Collector Voltage (BVCC) . . . . . . . . . . . . . . . . . . 36 V

Emitter-Emitter Voltage (BVEE) . . . . . . . . . . . . . . . . . . . . . 36 V

Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA

Emitter Current (IE) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA

Total Power Dissipation

Ambient Temperature

≤ 70°C2 . . . . . . . . . . . . . . . .500 mW

Operating Temperature Range

MAT03A . . . . . . . . . . . . . . . . . . . . . . . . . . –55

°C to +125°C

MAT03E/F . . . . . . . . . . . . . . . . . . . . . . . . . –40

°C to +85°C

Operating Junction Temperature . . . . . . . . . . –55

°C to +150°C

Storage Temperature . . . . . . . . . . . . . . . . . . . –65

°C to +150°C

Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . +300

°C

Junction Temperature . . . . . . . . . . . . . . . . . . –65

°C to +150°C

NOTES

1Absolute maximum ratings apply to both DICE and packaged devices.

2Rating applies to TO-78 not using a heat sink, and LCC; devices in free air only. For

TO-78, derate linearly at 6.3 mW/

°C above 70°C ambient temperature; for LCC,

derate at 7.8 mW/

°C.

ORDERING GUIDE

VOS max

Temperature

Package

Model

(TA = +25 C) Range

Option

MAT03AH

100

µV

–55

°C to +125°C

TO-78

MAT03EH

100

µV

–40

°C to +85°C

TO-78

MAT03FH

200

µV

–40

°C to +85°C

TO-78

NOTES

1Burn-in is available on industrial temperature range parts.

2For devices processed in total compliance to MIL-STD-883, add/883 after part

number. Consult factory for 883 data sheet.

WARNING!

ESD SENSITIVE DEVICE

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the MAT03 features proprietary ESD protection circuitry, permanent damage may

occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

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