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MAT04EY 数据表(PDF) 2 Page - Analog Devices

部件名 MAT04EY
功能描述  Matched Monolithic Quad Transistor
PDF  12 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

MAT04EY 数据表(HTML) 2 Page - Analog Devices

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ELECTRICAL CHARACTERISTICS (@ T
A = 25 C unless otherwise noted. Each transistor is individually tested. For matching
parameters (VOS, IOS,
∆hFE) each dual transistor combination is verified to meet stated limits. All tests made at endpoints unless otherwise noted.)
MAT04E
MAT04F
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Max
Unit
Current Gain
hFE
10
µA ≤ IC ≤ 1 mA
0 V
≤ V
CB
≤ 30 V1
400
800
300
600
Current Gain Match
∆hFE
IC = 100
µA
0 V
≤ VCB ≤ 30 V2
0.5
2
1
4
%
Offset Voltage
VOS
10
µA ≤ I
C
≤ 1 mA
0 V
≤ VCB ≤ 30 V3
50
200
100
400
µV
Offset Voltage Change vs.
∆VOS/∆IC
10
µA ≤ IC ≤ 1 mA
Collector Current
VCB = 0 V
3
525
10
50
µV
Offset Voltage Change vs. VCB
∆VOS/∆VCB 10 µA ≤ IC ≤ 1 mA
0 V
≤ VCB ≤ 30 V3
50
100
100
200
µV
Bulk Emitter Resistance
rBE
10
µA ≤ I
C
≤ 1 mA
VCB = 0 V
4
0.4
0.6
0.4
0.6
Ω
Input Bias Current
IB
IC = 100
µA
0 V
≤ V
CB
≤ 30 V
125
250
165
330
nA
Input Offset Current
IOS
IC = 100
µA; VCB = 0 V
0.6
5
2
13
nA
Breakdown Voltage
BVCEO
IC = 10
µA40
40
V
Collector Saturation Voltage
VCE(SAT)
IB = 100
µA; I
C = 1 mA
0.03
0.06
0.03
0.06
V
Collector-Base Leakage Current
ICBO
VCB = 40 V
5
5
pA
Noise Voltage Density
en
VCB = 0 V; fO = 10 Hz
2
3
2
4
nV/
√Hz
IC = 1 mA; fO = 100 Hz
1.8
2.5
1.8
3
nV/
√Hz
fO = 1 kHz
5
1.8
2.5
1.8
3
nV/
√Hz
Gain Bandwidth Product
fT
IC = 1 mA; VCE = 10 V
300
300
MHz
Output Capacitance
COBO
VCB = 15 V; IE = 0
f = 1 MHz
10
10
pF
Input Capacitance
CEBO
VBE = 0 V; IC = 0
f = 1 MHz
40
40
pF
NOTES
1Current gain measured at I
C = 10
µA, 100 µA and 1 mA.
2Current gain match is defined as:
∆
∆
h
Ih
I
FE
BFE
MIN
C
=
100(
)(
)
3Measured at I
C = 10
µA and guaranteed by design over the specified range of I
C.
4Guaranteed by design.
5Sample tested.
Specifications subject to change without notice.
–2–
REV. D
MAT04–SPECIFICATIONS



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