ORDERING INFORMATION*

Temperature

Package

Package

Model

Range

Description

Option

MLT04GP

–40

°C to +85°C

18-Pin P-DIP

N-18

MLT04GS

–40

°C to +85°C

18-Lead SOIC SOL-18

MLT04GS-REEL

–40

°C to +85°C

18-Lead SOIC SOL-18

MLT04GBC

+25

°C

Die

*For die specifications contact your local Analog sales office. The MLT04

contains 211 transistors.

(V

±2.5 V

Ω, T

°C unless otherwise noted.)

–2–

MLT04–SPECIFICATIONS

Parameter

Symbol

Conditions

Min

Typ

Max

Units

X

–2.5 V < X < +2.5 V, Y = +2.5 V

–5

±2

5

% FS

Y

–2.5 V < Y < +2.5 V, X = +2.5 V

–5

±2

5

% FS

X

–2.5 V < X < +2.5 V, Y = +2.5 V

–1

±0.2

+1

% FS

Y

–2.5 V < Y < +2.5 V, X = +2.5 V

–1

±0.2

+1

% FS

Total Error Drift

TCE

X

X = –2.5 V, Y = 2.5 V, T

0.005

%/

°C

Total Error Drift

TCE

Y

Y = –2.5 V, X = 2.5 V, T

0.005

%/

°C

K

X =

±2.5 V, Y = ±2.5 V, T

0.38

0.40

0.42

1/V

Output Offset Voltage

Z

OS

X = 0 V, Y = 0 V, T

–50

±10

50

mV

Output Offset Drift

TCZ

OS

X = 0 V, Y = 0 V, T

µV/°C

Offset Voltage, X

X

OS

X = 0 V, Y =

±2.5 V, T

–50

±10.5 50

mV

Offset Voltage, Y

Y

OS

Y = 0 V, X =

±2.5 V, T

–50

±10.5 50

mV

DYNAMIC PERFORMANCE

Small Signal Bandwidth

BW

V

8

MHz

Slew Rate

SR

V

30

53

V/

µs

Settling Time

t

S

V

to 1% Error Band

1

µs

AC Feedthrough

FT

AC

X = 0 V, Y = 1 V rms @ f = 100 kHz

–65

dB

Crosstalk @ 100 kHz

CT

AC

X = Y = 1 V rms Applied to Adjacent Channel

–90

dB

OUTPUTS

Audio Band Noise

E

N

f = 10 Hz to 50 kHz

76

µV rms

Wide Band Noise

E

N

Noise BW = 1.9 MHz

380

µV rms

Spot Noise Voltage

e

N

f = 1 kHz

0.3

µV/√Hz

Total Harmonic Distortion

THD

X

f = 1 kHz, LPF = 22 kHz, Y = 2.5 V

0.1

%

THD

Y

f = 1 kHz, LPF = 22 kHz, X = 2.5 V

0.02

%

Open Loop Output Resistance

R

OUT

40

Ω

Voltage Swing

V

PK

V

±3.0

±3.3

V

P

Short Circuit Current

I

SC

30

mA

INPUTS

Analog Input Range

IVR

GND = 0 V

–2.5

+2.5

V

Bias Current

I

B

X = Y = 0 V

2.3

10

µA

Resistance

R

IN

1M

Ω

Capacitance

C

IN

3pF

SQUARE PERFORMANCE

Total Square Error

E

SQ

X = Y = 1

5

% FS

POWER SUPPLIES

Positive Current

I

CC

V

15

20

mA

Negative Current

I

EE

V

15

20

mA

Power Dissipation

P

DISS

Calculated = 5 V

× I

150

200

mW

Supply Sensitivity

PSSR

X = Y = 0 V, V

10

mV/V

Supply Voltage Range

V

RANGE

For V

±4.75

±5.25 V

REV. B

NOTES

±2.5 V full scale, i.e., 1% FS = 25 mV.

× X × Y.

Specifications subject to change without notice.

ABSOLUTE MAXIMUM RATINGS*

Supply Voltages V

±7 V

Inputs X

V

Outputs W

I

V

Operating Temperature Range

–40

°C to +85°C

Maximum Junction Temperature (T

+150

°C

Storage Temperature

–65

°C to +150°C

Lead Temperature (Soldering, 10 sec)

+300

°C

Package Power Dissipation

(T

Thermal Resistance

θ

JA

PDIP-18 (N-18)

74

°C/W

SOIC-18 (SOL-18)

89

°C/W

*Stresses above those listed under “Absolute Maximum Ratings” may cause perma-

nent damage to the device. This is a stress rating only and functional operation of

the device at these or any other conditions above those indicated in the operational

section of this specification are not implied.