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MAT04FS 数据表(PDF) 3 Page - Analog Devices

部件名 MAT04FS
功能描述  Matched Monolithic Quad Transistor
PDF  12 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

MAT04FS 数据表(HTML) 3 Page - Analog Devices

  MAT04FS Datasheet HTML 1Page - Analog Devices MAT04FS Datasheet HTML 2Page - Analog Devices MAT04FS Datasheet HTML 3Page - Analog Devices MAT04FS Datasheet HTML 4Page - Analog Devices MAT04FS Datasheet HTML 5Page - Analog Devices MAT04FS Datasheet HTML 6Page - Analog Devices MAT04FS Datasheet HTML 7Page - Analog Devices MAT04FS Datasheet HTML 8Page - Analog Devices MAT04FS Datasheet HTML 9Page - Analog Devices Next Button
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ELECTRICAL CHARACTERISTICS (at –25 C ≤ T
A
85 C for MAT04E, –40 C
≤ TA 85 C for MAT04F, unless
otherwise noted. Each transistor is individually tested. For matching parameters (VOS, IOS) each dual transistor combination is
verified to meet stated limits. All tests made at endpoints unless otherwise noted.)
MAT04E
MAT04F
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Max
Unit
Current Gain
hFE
10
µA ≤ I
C
≤ 1 mA
0 V
≤ VCB ≤ 30 V1
225
625
200
500
Offset Voltage
VOS
10
µA ≤ IC ≤ 1 mA
0 V
≤ V
CB
≤ 30 V2
60
260
120
520
µV
Average Offset
TCVOS
IC = 100
µA
Voltage Drift
VCB = 0 V
3
0.2
1
0.4
2
µV/°C
Input Bias Current
IB
IC = 100
µA
0 V
≤ VCB ≤ 30 V
160
445
200
500
nA
Input Offset Current
IOS
IC = 100
µA
VCB = 0 V
4
20
8
40
nA
Average Offset
TCIOS
IC = 100
µA
Current Drift
VCB = 0 V
50
100
pA/
°C
Breakdown Voltage
BVCEO
IC = 10
µA40
40
V
Collector-Base
ICBO
VCB = 40 V
Leakage Current
0.5
0.5
nA
Collector-Emitter
ICES
VCE = 40 V
Leakage Current
5
5
nA
Collector-Substrate
ICS
VCS = 40 V
Leakage Current
0.7
0.7
nA
MAT04
–3–
REV. D



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