–2–

REV. 0

OP186–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Conditions

Min

Typ

Max

Units

INPUT CHARACTERISTICS

Offset Voltage

1

0.8

5

mV

0

°C ≤ T

A

≤ +125°C6

mV

Input Bias Current

37

nA

0

°C ≤ T

A

≤ +125°C10

nA

Input Offset Current

0.1

2

nA

0

°C ≤ T

A

≤ +125°C5

nA

Input Voltage Range

0

1.2

V

Common-Mode Rejection Ratio

CMRR

65

90

dB

0

°C ≤ T

A

≤ +125°C60

dB

Large Signal Voltage Gain

Ω , V

5

18

V/mV

0

°C ≤ T

A

≤ +125°C

2

V/mV

Offset Voltage Drift

∆V

∆T

3.5

µV/°C

Bias Current Drift

∆I

∆T

30

pA/

°C

Offset Current Drift

∆I

∆T

3

pA/

°C

OUTPUT CHARACTERISTICS

Output Voltage High

Ω to GND

2.125

2.16

V

0

°C to +125°C

2.1

V

Output Voltage Low

Ω to V+

25

60

mV

0

°C to +125°C75

mV

Short Circuit Limit

±500

µA

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

78

95

dB

0

°C ≤ T

A

≤ +125°C76

dB

Supply Current/Amplifier

45

µA

0

°C ≤ T

5.5

µA

DYNAMIC PERFORMANCE

Slew Rate

SR

Ω, C

60

V/ms

Turn-On Time

17

µs

35

µs

Gain Bandwidth Product

GBP

150

kHz

Phase Margin

Φo

60

Degrees

NOISE PERFORMANCE

Voltage Noise Density

f = 1 kHz

80

nV/

√Hz

Current Noise Density

<1

pA/

√Hz

NOTE

Specifications subject to change without notice.