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REF01CJ 数据表(PDF) 4 Page - Analog Devices |
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REF01CJ 数据表(HTML) 4 Page - Analog Devices |
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4 / 12 page ![]() REV. C REF01 –4– WAFER TEST LIMITS REF01NT REF01N REF01GT REF01G Parameter Symbol Conditions Limit Limit Limit Limit Unit Output Voltage VO IL = 0 10.05 10.03 10.10 10.05 V max 9.95 9.97 9.90 9.95 V min Output Adjustment Range VTRIM RP = 10 k Ω±3.0 ±3.0 % min Line Regulation VIN = 13 V to 33 V 0.015 0.01 0.015 0.01 %/V max *Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing. (@ VIN = 15 V, TA = 25 C for REF01N and REF01G devices, TA = 125 C for REF01NT and REF01GT devices, unless otherwise noted.)* TYPICAL ELECTRICAL CHARACTERISTICS REF01NT REF01N REF01GT REF01G Parameter Symbol Conditions Typical Typical Typical Typical Unit Load Regulation IL = 0 mA to 10 mA IL = 0 mA to 8 mA, NT, GT @ 125 °C 0.007 0.005 0.009 0.006 %/mA Output Voltage Noise en p-p 0.1 Hz to 10 Hz 20 20 20 20 µV p-p Turn-On Settling To ±0.1% of Final Time tON Value NT, GT @ 125 °C 7.5 5.0 7.5 5.0 µs Quiescent Current ISY No Load, NT, GT @ 125 °C 1.4 1.0 1.4 1.0 mA Load Current IL 21 21 21 21 mA Sink Current IS –0.5 –0.5 –0.5 –0.5 mA Short Circuit Current ISC VO = 0 30 3030 30mA Output Voltage Temperature Coefficient TCVO 10 10 10 10 ppm/ °C *For 25 °C specifications of REF01NT and REF01GT, see REF01N and REF01G, respectively. (@ VIN = 15 V, TA = 25 C, unless otherwise noted.)* |
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