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APT15GT60KR 数据表(PDF) 2 Page - Advanced Power Technology

部件名 APT15GT60KR
功能描述  The Thunderbolt IGBT??is a new generation of high voltage power IGBTs.
PDF  2 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  ADPOW [Advanced Power Technology]
网页  http://www.advpowertech.com
标志 ADPOW - Advanced Power Technology

APT15GT60KR 数据表(HTML) 2 Page - Advanced Power Technology

  APT15GT60KR Datasheet HTML 1Page - Advanced Power Technology APT15GT60KR Datasheet HTML 2Page - Advanced Power Technology  
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background image
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
DYNAMIC CHARACTERISTICS
APT15GT60KR
UNIT
°C/W
lb•in
MIN
TYP
MAX
0.93
40
10
Characteristic
Junction to Case
Junction to Ambient
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
Symbol
RΘJC
RΘJA
Torque
THERMAL CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25
°C)
VGE = 15V
VCC = 0.80VCES
IC = IC2
RG = 10Ω
Inductive Switching (150
°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10Ω
TJ = +150°C
Inductive Switching (25
°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10Ω
TJ = +25°C
VCE = 20V, IC = IC2
MIN
TYP
MAX
825
90
52
73
33
6
9
28
85
110
13
7
155
45
.15
40
0.55
13
7
130
25
24
3
11
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C = IC2, VCC = 50V, RGE = 25
Ω, L = 200µH, T
j = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.



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