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APT6013LLL 数据表(PDF) 2 Page - Advanced Power Technology |
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APT6013LLL 数据表(HTML) 2 Page - Advanced Power Technology |
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2 / 2 page ![]() DYNAMIC CHARACTERISTICS APT6013 B2LL - LLL 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) Drain Source Gate These dimensions are equal to the TO-247 without the mounting hole. 2-Plcs. 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) Drain Source Gate Dimensions in Millimeters and (Inches) 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) T-MAXTM (B2) Package Outline TO-264 (L) Package Outline APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 ADVANCE TECHNICAL INFORMATION Symbol C iss C oss C rss Q g Q gs Q gd t d(on) t r t d(off) t f Test Conditions V GS = 0V V DS = 25V f = 1 MHz V GS = 10V V DD = 0.5 V DSS I D = I D[Cont.] @ 25°C V GS = 15V V DD = 0.5 V DSS I D = I D[Cont.] @ 25°C R G = 0.6 W MIN TYP MAX 5640 1010 63 129 30 58 16 11 29 5 UNIT pF nC ns Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (V GS = 0V, I S = -I D[Cont.] ) Reverse Recovery Time (I S = -I D[Cont.] , dl S /dt = 100A/µs) Reverse Recovery Charge (I S = -I D[Cont.] , dl S /dt = 100A/µs) Peak Diode Recovery dv/dt 5 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts ns µC V/ns MIN TYP MAX 43 172 1.3 690 15.9 8 1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471 temperature. 4 Starting Tj = +25°C, L = 2.70mH, RG = 25W, Peak IL = 43A 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 5dv/ dt numbers reflect the limitations of the test circuit rather than the device itself. I S £ -I D [Cont.] di/ dt £ 700A/µs V R £ V DSS T J £ 150 °C APT Reserves the right to change, without notice, the specifications and information contained herein. THERMAL CHARACTERISTICS Symbol RqJC RqJA MIN TYP MAX 0.22 40 UNIT °C/W Characteristic Junction to Case Junction to Ambient Symbol I S I SM V SD t rr Q rr dv/ dt |
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