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APT8024B2VR 数据表(PDF) 2 Page - Advanced Power Technology |
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APT8024B2VR 数据表(HTML) 2 Page - Advanced Power Technology |
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2 / 2 page ![]() ADVANCED TECHNICAL INFORMATION 1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471 temperature. 4 Starting Tj = +25°C, L = 5.51mH, RG = 25W, Peak IL = 33A 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) Collector Emitter Gate Collector Emitter Gate 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2.87 (.113) 3.12 (.123) 2-Plcs. TO-264 (L) Package Outline T-MAX™ (B2) Package Outline These dimensions are equal to the TO-247 without the mounting hole. APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 DYNAMIC CHARACTERISTICS APT8024 B2VR - LVR Symbol C iss C oss C rss Q g Q gs Q gd t d(on) t r t d(off) t f Test Conditions V GS = 0V V DS = 25V f = 1 MHz V GS = 10V V DD = 0.5 V DSS I D = 0.5 I D[Cont.] @ 25°C V GS = 15V V DD = 0.5 V DSS I D = I D[Cont.] @ 25°C R G = 0.6 W MIN TYP MAX 7700 750 370 390 35 202 18 15 66 9 UNIT pF nC ns Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts ns µC MIN TYP MAX 33 132 1.3 940 25.5 THERMAL CHARACTERISTICS Symbol RqJC RqJA MIN TYP MAX 0.20 40 UNIT °C/W Characteristic Junction to Case Junction to Ambient Symbol I S I SM V SD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (V GS = 0V, I S = -I D[Cont.] ) Reverse Recovery Time (I S = -I D[Cont.] , dl S /dt = 100A/µs) Reverse Recovery Charge (I S = -I D[Cont.] , dl S /dt = 100A/µs) |
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