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APT8065BVFR 数据表(PDF) 2 Page - Advanced Power Technology

部件名 APT8065BVFR
功能描述  Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
PDF  4 Pages
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制造商  ADPOW [Advanced Power Technology]
网页  http://www.advpowertech.com
标志 ADPOW - Advanced Power Technology

APT8065BVFR 数据表(HTML) 2 Page - Advanced Power Technology

  APT8065BVFR Datasheet HTML 1Page - Advanced Power Technology APT8065BVFR Datasheet HTML 2Page - Advanced Power Technology APT8065BVFR Datasheet HTML 3Page - Advanced Power Technology APT8065BVFR Datasheet HTML 4Page - Advanced Power Technology  
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10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
DYNAMIC CHARACTERISTICS
APT8065BVFR
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.6Ω
MIN
TYP
MAX
3050
3700
300
420
150
225
150
225
17
25
70
105
12
24
11
22
60
90
12
24
UNIT
pF
nC
ns
MIN
TYP
MAX
13
52
1.3
5
Tj = 25°C
200
Tj = 125°C
350
Tj = 25°C
0.7
Tj = 125°C
1.8
Tj = 25°C
11
Tj = 125°C
17
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 14.32mH, RG = 25Ω, Peak IL = 13A
2 Pulse Test: Pulse width < 380
µS, Duty Cycle < 2%
5 IS ≤ -ID [Cont.], di/dt = 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 2.0Ω,
VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.45
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient



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