DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Test Conditions

V

GS

= 0V

V

DS

= 300V

f = 1 MHz

MIN

TYP

MAX

1500

1800

90

130

28

50

UNIT

pF

FUNCTIONAL CHARACTERISTICS

Symbol

G

PS

η

ψ

MIN

TYP

MAX

17

18.7

83

UNIT

dB

%

Test Conditions

V

DD

= 300V

V

GS

= 0V

P

out

= 300W

f = 13.56MHz

No Degradation in Output Power

Characteristic

Common Source Amplifier Power Gain

Drain Efficiency

Electrical Ruggedness VSWR 30:1

ARF444/445

µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

TYPICAL 13.56 MHz, 1000 WATT PUSH-PULL CLASS 'C' POWER AMPLIFIER CIRCUIT

Parts List

R1-R16 = 4.7

Ω 1W

C1 = 200pF Chip Capacitor

C2-C6 = 0.1

µF Disk Ceramic

C7, C8 = 0.01 Disk Ceramic

Q1, Q3 = ARF444

Q2, Q4 = ARF445

L1, L2 = 0.37

µH: 6T, #18AWG, ID=0.438

RFC1 = 2T, #14 PTFE coated twisted pair on a Fair-Rite #2643665702 shield bead,

µi=850

T1 = 9:1 (Z) conventional transformer; 3:1 (T), #18 stranded PTFE coated wire on two Fair-Rite #2643540002,

µi=850

T2 = 1:1 (Z) conventional transformer; 2:2 (T), #14 stranded PTFE coated wire on two stacks of three

Fair-Rite #2643102002 shielded bead,

µi=850

BFC1 = 6T, #18 Twisted pair stranded PTFE coated wire on three stacked Indiana General Toroid #F624-19-Q1

µi=125

L2

L1

RFC1

J1

RF INPUT

J2

RF OUTPUT

J3

300VDC

Q1

T1

BFC1

T2

C1

C6

C7

Q2

Q3

Q4

C2

C3

C4

C5

R1-R4

R5-R8

R9-R12

R13-R16

C8

Circuit Characteristics

P

out

= 1000W

Gain = 16.5dB

Efficiency = 80%