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ACT-PS512K8 数据表(PDF) 3 Page - Aeroflex Circuit Technology

部件名 ACT-PS512K8
功能描述  ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM
PDF  6 Pages
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制造商  AEROFLEX [Aeroflex Circuit Technology]
网页  http://www.aeroflex.com
标志 AEROFLEX - Aeroflex Circuit Technology

ACT-PS512K8 数据表(HTML) 3 Page - Aeroflex Circuit Technology

  ACT-PS512K8 Datasheet HTML 1Page - Aeroflex Circuit Technology ACT-PS512K8 Datasheet HTML 2Page - Aeroflex Circuit Technology ACT-PS512K8 Datasheet HTML 3Page - Aeroflex Circuit Technology ACT-PS512K8 Datasheet HTML 4Page - Aeroflex Circuit Technology ACT-PS512K8 Datasheet HTML 5Page - Aeroflex Circuit Technology ACT-PS512K8 Datasheet HTML 6Page - Aeroflex Circuit Technology  
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Aeroflex Circuit Technology
SCD3764 REV A 6/2/98 Plainview NY (516) 694-6700
3
AC Characteristics
(VCC = 5.0V, VSS= 0V, TC = -55°C to +125°C or -40°C to +85°C)
Read Cycle
Parameter
Sym
–010
Min Max
–012
Min Max
–015
Min Max
–017
Min Max
–020
Min Max
–025
Min Max
Units
Read Cycle Time
tRC
10
12
15
17
20
25
ns
Address Access Time
tAA
10
12
15
17
20
25
ns
Chip Enable Access Time
tACE
10
12
15
17
20
25
ns
Output Hold from Address Change
tOH
3
3
3
3
4
5
ns
Output Enable to Output Valid
tOE
5
6
7
8
10
12
ns
Chip Enable to Output in Low Z (1)
tCLZ
3
3
3
3
3
3
ns
Output Enable to Output in Low Z (1)
tOLZ
0
0
0
0
0
0
ns
Chip Deselect to Output in High Z (1)
tCHZ
5
6
7
7
8
10
ns
Output Disable to Output in High Z (1)
tOHZ
5
6
7
7
8
10
ns
Note 1. Guaranteed by design, but not tested
Write Cycle
Parameter
Sym
–010
Min Max
–012
Min Max
–015
Min Max
–017
Min Max
–020
Min Max
–025
Min Max
Units
Write Cycle Time
tWC
10
12
15
17
20
25
ns
Chip Enable to End of Write
tCW
7
8
10
12
13
15
ns
Address Valid to End of Write
tAW
7
8
10
12
13
15
ns
Data Valid to End of Write
tDW
5
6
8
8
9
10
ns
Write Pulse Width
tWP
7
8
10
12
13
15
ns
Address Setup Time
tAS
0
0
0
0
0
0
ns
Address Hold Time
tAH
0
0
0
0
0
0
ns
Output Active from End of Write (1)
tOW
3
3
3
3
4
5
ns
Write to Output in High Z (1)
tWHZ
5
6
7
8
8
10
ns
Data Hold from Write Time
tDH
0
0
0
0
0
0
ns
Note 1. Guaranteed by design, but not tested
Data Retention Electrical Characteristics (Special Order Only)
VCC = 5.0V, VSS= 0V, TC = -55°C to +125°C or -40°C to +85°C)
Parameter
Sym
Test Conditions
All Speeds
Min
Typ
Max
Units
VCC for Data Retention
VDR
CE
≥ V
CC – 0.2V
2
5.5
V
Data Retention Current
ICCDR1
VCC = 3V
0.5
2.0
mA



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