MMDF2P02E

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

25

—

—

2.2

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

1.0

10

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS(2)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

VGS(th)

1.0

–

2.0

3.8

3.0

–

Vdc

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 2.0 Adc)

(VGS = 4.5 Vdc, ID = 1.0 Adc)

RDS(on)

—

—

0.19

0.3

0.25

0.4

Ohm

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)

gFS

1.0

2.8

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

340

475

pF

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

220

300

Transfer Capacitance

f = 1.0 MHz)

Crss

—

75

150

SWITCHING CHARACTERISTICS(3)

Turn–On Delay Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 5.0 Vdc,

RG = 6.0 Ω)

td(on)

—

20

40

ns

Rise Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 5.0 Vdc,

RG = 6.0 Ω)

tr

—

40

80

Turn–Off Delay Time

VGS = 5.0 Vdc,

RG = 6.0 Ω)

td(off)

—

53

106

Fall Time

G = 6.0 Ω)

tf

—

41

82

Turn–On Delay Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

td(on)

—

13

26

Rise Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

tr

—

29

58

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 6.0 Ω)

td(off)

—

30

60

Fall Time

G = 6.0 Ω)

tf

—

28

56

Gate Charge

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

QT

—

10

15

nC

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

Q1

—

1.0

—

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

Q2

—

3.5

—

Q3

—

3.0

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(2)

(IS = 2.0 Adc, VGS = 0 Vdc)

VSD

—

1.5

2.0

Vdc

Reverse Recovery Time

See Figure 11

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

32

64

ns

See Figure 11

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

19

—

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

tb

—

12

—

Reverse Recovery Storage Charge

QRR

—

0.035

—

µC

(1) Negative sign for P–Channel device omitted for clarity.

(2) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(3) Switching characteristics are independent of operating junction temperature.