MMDF2P02HD

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

0

0

2

4

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0

2

4

10

0.6

0.04

Figure 3. On–Resistance versus

Gate–To–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

1

100

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage Current

versus Voltage

VDS ≥ 10 V

100

°C

25

°C

TJ = – 55°C

0.4

6

8

– 50

0

50

100

150

3

1

1

2

4

3

1.0

1.5

2.0

3.5

0.2

0.20

0.08

0

1.0

2.0

3.0

4.0

0.6

10

0

5

10

15

VGS = 10 V

ID = 2 A

1.4

20

0

0.16

0.12

2.5

3.0

ID = 1 A

TJ = 25°C

TJ = 25°C

0.5

1.5

2.5

3.5

10 V

VGS = 4.5 V

– 25

25

75

125

0.8

1.6

1.2

VGS = 0 V

TJ = 125°C

100

°C

1.0

3.7 V

3.1 V

2.7 V

2.9 V

3.3 V

3.5 V

4.5 V

3.9 V

TJ = 25°C

2.5 V

VGS = 10 V

0

0.2

0.4

0.6

0.8

1.4

1

1.2

1.6

1.8

2