MMDF3200Z

2

Motorola TMOS Power MOSFET Transistor Device Data

When mounted on 1 inch square (25.40 mm square) FR–4 or G–10 board (VGS = 10 V @ 10 Seconds)

Parameter

Symbol

Maximum

Unit

Drain Current — Continuous @ TA = 25°C

ID

ID

IDM

11.5

9.2

57.5

A

A

A

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

PD

2.0

16

Watts

mW/

°C

Thermal Resistance — Junction to Ambient

R

θJA

62.5

°C/W

Continuous Source Current (Diode Current)

IS

TBD

A

When mounted on 1 inch square (25.40 mm square) FR–4 or G–10 board (VGS = 10 V @ Steady State)

Parameter

Symbol

Maximum

Unit

Drain Current — Continuous @ TA = 25°C

ID

ID

IDM

8.0

5.9

40

A

A

A

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

PD

1.28

10.2

Watts

mW/

°C

Thermal Resistance — Junction to Ambient

R

θJA

98

°C/W

Continuous Source Current (Diode Current)

IS

TBD

A

When mounted on minimum FR–4 or G–10 board (VGS = 10 V @ Steady State)

Parameter

Symbol

Maximum

Unit

Drain Current — Continuous @ TA = 25°C

ID

ID

IDM

7.1

5.2

35.5

A

A

A

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

PD

0.75

6.0

Watts

mW/

°C

Thermal Resistance — Junction to Ambient

R

θJA

166

°C/W

Continuous Source Current (Diode Current)

IS

TBD

A

(1) Repetitive rating; pulse width limited by maximum junction temperature.