MMDF3C03HD

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Polarity

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

V(BR)DSS

—

30

—

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

IDSS

(N)

(P)

—

—

—

—

1.0

1.0

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

—

—

±100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

—

—

1.0

—

—

—

—

—

Vdc

mV/

°C

Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.5 Adc)

(VGS = 10 Vdc, ID = 3.5 Adc)

RDS(on)1

(N)

(P)

—

—

0.037

0.075

0.05

0.10

Ohms

Static Drain–to–Source On–Resistance

(VGS = 4.5 Vdc, ID = 2.5 Adc)

(VGS = 4.5 Vdc, ID = 2.0 Adc)

RDS(on)2

(N)

(P)

—

—

0.55

0.12

0.08

0.16

Ohms

Forward Transconductance

(VDS = 15 Vdc, ID = 3.5 Adc)

gFS

(N)

(P)

—

—

9.0

6.0

—

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

24 Vdc

Ciss

(N)

(P)

—

—

430

425

600

600

pF

Output Capacitance

(VDS = 24 Vdc,

VGS = 0 Vdc,

f = 1.0 MHz)

Coss

(N)

(P)

—

—

217

209

300

300

Transfer Capacitance

f = 1.0 MHz)

Crss

(N)

(P)

—

—

67.5

57.2

135

80

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(V

15 Vd

td(on)

(N)

(P)

—

—

8.2

11.7

16.4

23.4

ns

Rise Time

(VDD = 15 Vdc,

ID = 1.0 Adc,

tr

(N)

(P)

—

—

8.48

15.8

16.9

31.6

Turn–Off Delay Time

D

,

VGS = 10 Vdc,

RG = 6.0 Ω)

td(off)

(N)

(P)

—

—

89.6

167.3

179

334.6

Fall Time

tf

(N)

(P)

—

—

61.1

102.6

122

205.2

Total Gate Charge

(See Figure 8)

(V

10 Vd

QT

(N)

(P)

—

—

15.7

14.8

31.4

29.6

nC

(VDS = 10 Vdc,

ID =3 5Adc

Q1

(N)

(P)

—

—

2.0

1.7

—

—

ID = 3.5 Adc,

VGS = 10 Vdc)

Q2

(N)

(P)

—

—

4.6

4.7

—

—

Q3

(N)

(P)

—

—

3.9

3.4

—

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(2)

(IS = 1.7 Adc, VGS = 0 Vdc)

(IS = –1.7 Adc, VGS = 0 Vdc)

VSD

(N)

(P)

—

—

0.77

0.90

1.2

1.2

Vdc

Reverse Recovery Time

(N)

(ID = 3.5 Adc,

trr

(N)

(P)

—

—

54.5

77.4

—

—

ns

( D

,

VGS = 0 Vdc

dIS/dt = 100 A/µs)

ta

(N)

(P)

—

—

14.8

19.9

—

—

(P)

(ID = 3.5 Adc,

tb

(N)

(P)

—

—

39.7

57.5

—

—

Reverse Recovery Stored Charge

( D

,

VGS = 0 Vdc

dIS/dt = 100 A/µs)

QRR

(N)

(P)

—

—

0.048

0.088

—

—

µC

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.