MMDF3P03HD

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

30

—

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 24 Vdc, VGS = 0 Vdc)

(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

1.0

20

µAdc

Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

—

—

Vdc

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 3.5 Adc)

(VGS = 4.5 Vdc, ID = 2.0 Adc)

RDS(on)

—

—

0.075

0.12

0.1

0.16

Ω

Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc)

gFS

—

6.0

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 24 Vdc,

Ciss

—

425

600

pF

Output Capacitance

(VDS = 24 Vdc,

VGS = 0 Vdc,

f

1 0 MHz)

Coss

—

209

300

Transfer Capacitance

f = 1.0 MHz)

Crss

—

57.2

80

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(VDD =15Vdc

td(on)

—

11.7

23.4

ns

Rise Time

(VDD = 15 Vdc,

VGS = 10 Vdc,

tr

—

15.8

31.6

Turn–Off Delay Time

GS

,

ID = 1.0 Adc,

RG =60 Ω)

td(off)

—

167.3

334.6

Fall Time

RG = 6.0 Ω)

tf

—

102.6

205.2

Gate Charge

(See Figure 8)

(V

10 Vd

QT

—

14.8

29.6

nC

(See Figure 8)

(VDS = 10 Vdc,

ID =3 5Adc

Q1

—

1.7

—

ID = 3.5 Adc,

VGS = 10 Vdc)

Q2

—

4.7

—

GS

)

Q3

—

3.42

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 1.7 Adc, VGS = 0 Vdc)

(IS = 1.7 Adc, VGS = 0 Vdc,

TJ = 125°C)

VSD

—

—

0.9

0.7

1.2

—

Vdc

Reverse Recovery Time

(I

3 5 Ad

trr

—

77.4

—

ns

(IS = 3.5 Adc,

VGS = 0 Vdc

ta

—

19.9

—

VGS = 0 Vdc,

dIS/dt = 100 A/µs)

tb

—

57.5

—

Reverse Recovery Stored Charge

S

µ )

QRR

—

0.088

—

µC

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.