MMDF7N02Z

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(Cpk

≥ 2.0) (1) (3)

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

20

—

—

15

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

1.0

10

µAdc

Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)

IGSS

—

—

3.0

µAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(Cpk

≥ 2.0) (1) (3)

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

0.5

—

0.7

2.5

1.0

—

Vdc

mV/

°C

Static Drain–to–Source On–Resistance

(Cpk

≥ 2.0) (1) (3)

(VGS = 4.5 Vdc, ID = 7.0 Adc)

(VGS = 2.5 Vdc, ID = 3.5 Adc)

RDS(on)

—

—

23

30

27

35

m

Ω

Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) (1)

gFS

5.0

11

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

16 Vdc V

0 Vdc

Ciss

—

450

630

pF

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

350

490

Transfer Capacitance

f = 1.0 MHz)

Crss

—

110

155

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(V

10 Vd

I

1 0 Ad

td(on)

—

31

62

ns

Rise Time

(VDD = 10 Vdc, ID = 1.0 Adc,

VGS =4 5Vdc

tr

—

230

460

Turn–Off Delay Time

VGS = 4.5 Vdc,

RG = 6.0 Ω) (1)

td(off)

—

725

1450

Fall Time

G

)

tf

—

780

1560

Gate Charge

See Figure 8

(V

12 Vd

I

5 0 Ad

QT

—

17

24

nC

See Figure 8

(VDS = 12 Vdc, ID = 5.0 Adc,

(1)

Q1

—

1.4

—

( DS

, D

,

VGS = 4.5 Vdc) (1)

Q2

—

6.7

—

Q3

—

6.5

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 7.0 Adc, VGS = 0 Vdc) (1)

(IS = 7.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

0.90

0.84

1.1

—

Vdc

Reverse Recovery Time

(I

7 0 Ad

V

0 Vd

trr

—

780

—

ns

(IS = 7.0 Adc, VGS = 0 Vdc,

(1)

ta

—

190

—

( S

,

GS

,

dIS/dt = 100 A/µs) (1)

tb

—

590

—

Reverse Recovery Stored Charge

QRR

—

5.7

—

µC

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperatures.

(3) Reflects typical values.

Cpk =

Max limit – Typ

3 x SIGMA