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Motorola TMOS Product Preview Data

Designer's™ Data Sheet

FETKY™

MOSFET and Schottky Rectifier

The FETKY

™ product family incorporates low RDS(on), true logic level MOSFETs

packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers

to offer high efficiency components in a space saving configuration. Independent pinouts

for TMOS and Schottky die allow the flexibility to use a single component for switching

and rectification functions in a wide variety of applications such as Buck Converter,

Buck–Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Manage-

ment in Battery Packs, Chargers, Cell Phones and other Portable Products.

Board Space Savings

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

20

Vdc

Drain–to–Gate Voltage (RGS = 1.0 MW)

VDGR

20

Vdc

Gate–to–Source Voltage — Continuous

VGS

"20

Vdc

Drain Current (3) — Continuous @ TA = 25°C

— Continuous @ TA = 100°C

— Single Pulse (tp

v 10 ms)

ID

ID

IDM

3.3

2.1

20

Adc

Apk

Total Power Dissipation @ TA = 25°C (2)

PD

2.0

Watts

Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C

VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W

EAS

324

mJ

Peak Repetitive Reverse Voltage

DC Blocking Voltage

VRRM

VR

20

Volts

Average Forward Current (3) (Rated VR) TA = 100°C

IO

1.0

Amps

Peak Repetitive Forward Current (3) (Rated VR, Square Wave, 20 kHz) TA = 105°C

Ifrm

2.0

Amps

Non–Repetitive Peak Surge Current

(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)

Ifsm

20

Amps

DEVICE MARKING

ORDERING INFORMATION

2P102

Device

Reel Size

Tape Width

Quantity

2P102

MMDFS2P102R2

13

″

12 mm embossed tape

2500 units

(1) Negative sign for P–channel device omitted for clarity.

(2) Pulse Test: Pulse Width

≤ 250 µs, Duty Cycle ≤ 2.0%.

(3) Mounted on 2

″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

HDTMOS and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

FETKY is a trademark of International Rectifier.

Order this document

by MMDFS2P102/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MMDFS2P102

P–Channel Power MOSFET

with Schottky Rectifier

20 Volts

RDS(on) = 0.16 W

VF = 0.39 Volts

CASE 751–05, Style 18

(SO– 8)

1

2

3

4

8

7

6

5

A

A

S

G

C

C

D

D

TOP VIEW

™

© Motorola, Inc. 1997