STP80NF70 datasheet(3/13 Pages) STMICROELECTRONICS

部件名	STP80NF70

功能描述	N-channel 68 V, 0.0082 Ω, 98 A, TO-220 STripFET™II Power MOSFET

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

3 / 13 page

STP80NF70

Electrical ratings

Doc ID 17610 Rev 1

3/13

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

VGS

Gate-source voltage

± 20

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC=100 °C

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

392

PTOT

Total dissipation at TC = 25 °C

190

Derating factor

1.27

W/°C

dv/dt (2)

ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX.

Peak diode recovery voltage slope

V/ns

EAS

(3)

Starting TJ = 25

oC, I

D = 40 A, VDD = 34 V.

Single pulse avalanche energy

700

Tstg

Storage temperature

-55 to 175

°C

Operating junction temperature

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

0.79

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose(1)

1.6 mm from case for 10 sec.

300

°C

STP80NF70 数据表(PDF) 3 Page - STMicroelectronics

STP80NF70 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表下载