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STTH1002CBY-TR 数据表(PDF) 2 Page - STMicroelectronics |
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STTH1002CBY-TR 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() Characteristics STTH1002C-Y 2/9 Doc ID 17536 Rev 2 1 Characteristics When the diodes 1 and 2 are used simultaneously: Δ T j (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) To evaluate the conduction losses use the following equation: P = 0.73 x IF(AV) + 0.032 IF 2 (RMS) Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(RMS) Forward rms current D2PAK 20 A DPAK 10 IF(AV) Avarage forward current δ = 0.5 Tc = 155 °C Per diode 5 A Tc = 150 °C Per device 10 Tc = 135 °C Per diode 8 Tc = 125 °C Per device 16 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 50 A Tstg Storage temperature range -65 to + 175 °C Tj Operating junction temperature range -40 to + 175 °C Table 3. Thermal parameters Symbol Parameter Value (max) Unit Rth(j-c) Junction to case Per diode 4.0 °C/W Per device 2.5 Rth(j-c) Coupling 1.0 Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 5 ms, δ < 2 % Reverse leakage current Tj = 25 °C VR = VRRM 5 µA Tj = 125 °C 3 40 VF (2) 2. Pulse test: tp = 380 µs, δ < 2 % Forward voltage drop Tj = 25 °C IF = 5 A 1.1 V Tj = 25 °C IF = 10 A 1.25 Tj = 150 °C IF = 5 A 0.78 0.89 Tj = 150 °C IF = 10 A 1.05 |
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