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STM32F207IE 数据表(PDF) 85 Page - STMicroelectronics |
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STM32F207IE 数据表(HTML) 85 Page - STMicroelectronics |
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85 / 177 page  STM32F20xxx Electrical characteristics Doc ID 15818 Rev 9 85/177 5.3.9 Internal clock source characteristics The parameters given in Table 30 and Table 31 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 12. High-speed internal (HSI) RC oscillator Figure 32. ACCHSI versus temperature Table 30. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - 16 - MHz ACCHSI Accuracy of the HSI oscillator User-trimmed with the RCC_CR register(2) 2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the ST website www.st.com. -- 1 % Factory- calibrated TA = –40 to 105 °C –8 - 4.5 % TA = –10 to 85 °C –4 - 4 % TA = 25 °C –1 - 1 % tsu(HSI) (3) 3. Guaranteed by design, not tested in production. HSI oscillator startup time -2.2 4 µs IDD(HSI) HSI oscillator power consumption -60 80 µA MS19012V2 -8 -6 -4 -2 0 2 4 6 -45 -35 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 Temperature (°C) max avg min |
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