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TS19460CSRLG 数据表(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

部件名 TS19460CSRLG
功能描述  AC/DC WLED Driver with External MOSFET Universal High Brightness
PDF  7 Pages
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制造商  TSC [Taiwan Semiconductor Company, Ltd]
网页  http://www.taiwansemi.com
标志 TSC - Taiwan Semiconductor Company, Ltd

TS19460CSRLG 数据表(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TS19460
AC/DC WLED Driver with External MOSFET
Universal High Brightness
2/7
Version: A12
Electrical Specifications (TA= 25
oC, V
IN= 12V, VLD=PWM=VDD, unless otherwise noted)
Function Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Input
DC Input Voltage Range
VINDC
DC input voltage
8.0
--
450
V
Shut-down Mode Supply Current
IINSD
Pin PWMD to GND
--
0.5
1.0
mA
Internal Regulator
Internally Regulated Voltage
VDD
VIN=8V, IDD(EXT)=0
500pF at Gate, RT=226kΩ
7.25
7.5
7.75
V
Line Regulation of VDD
∆VDDLine
VIN=8~450V, IDD(EXT)=0
500pF at Gate, RT=226kΩ
0
--
1.0
V
Load Regulation of VDD
∆VDDLoad
IDD(EXT)= 0 ~ 1mA
500pF at Gate, RT=226kΩ
0
--
100
mV
Undervoltage Lockout Threshold
UVLO
VDD rising
6.45
6.7
6.95
V
Undervoltage Lockout Hysteresis
∆UVLO
VDD falling
--
500
--
mV
Maximum Input Current
IIN (MAX)
VIN=8V
3.5
--
--
mA
Dimming
PWMD Input Low Voltage
VENL
VIN=8V~450V
--
--
0.8
V
PWMD Input High Voltage
VENH
VIN=8V~450V
2.0
--
--
V
PWMD Pull-down resistance at
PWMD
REN
VPWMD=5V
50
100
150
kΩ
Average Current Sense Logic
Current Sense Reference Voltage
VCS
238
250
262
mV
LD to Current Sense Ratio
Av(LD)
TA < +125ºC
--
0.18
--
LD input Voltage Shutdown
VLD(OFF)
VLD falling
--
150
--
mV
LD input Voltage Enable
∆VLD(OFF)
VLD rising
--
200
--
mV
Current Sense Blanking Interval
TBLANK
150
--
280
nS
Minimum On-Time
TON(min)
VCS= VCS + 30mV
--
--
1
uS
Off Time
TOFF
RT=1MΩ
32
--
48
uS
RT=226kΩ
8
--
12
Max. Steady-State Duty Cycle
DMAX
75
--
--
%
Short Circuit Protection
Hiccup Threshold Voltage
VCS
410
--
470
mV
Current Limit Delay CS to Gate
TDELAY
VCS= VCS + 30mV
--
--
150
nS
Short Circuit Hiccup Time
THICCUP
330
--
460
uS
Minimum On-Time (Short Circuit)
TON(min)
VCS= VDD
--
--
430
nS
Gate Driver
Gate Sourcing Current
ISOURCE
VGATE=0V, VDD=7.5V
165
--
--
mA
Gate Sinking Current
ISINK
VGATE=VDD, VDD=7.5V
165
--
--
mA
Gate output Rise Time
TRISE
CGATE=500pF, VDD=7.5V
--
30
50
nS
Gate Output Fall Time
TFALL
CGATE=500pF, VDD=7.5V
--
30
50
nS
Note 1: Limited by package power dissipation, whichever is lower



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