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MBR80100 数据表(PDF) 1 Page - Naina Semiconductor ltd.

部件名 MBR80100
功能描述  Schottky Power Diode, 80A
PDF  2 Pages
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制造商  NAINA [Naina Semiconductor ltd.]
网页  http://www.nainasemi.com
标志 NAINA - Naina Semiconductor ltd.

MBR80100 数据表(HTML) 1 Page - Naina Semiconductor ltd.

  MBR80100 Datasheet HTML 1Page - Naina Semiconductor ltd. MBR80100 Datasheet HTML 2Page - Naina Semiconductor ltd.  
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Naina Semiconductor Ltd.
MBR8045 thru
MBR80100R
1
D-95, Sector 63, Noida – 201301, India
Tel: 0120-4205450
Fax: 0120-4273653
sales@nainasemi.com
www.nainasemi.com
Schottky Power Diode, 80A
Features
Fast Switching
Low forward voltage drop
High surge capability
High efficiency, low power loss
Normal and Reverse polarity
Maximum Ratings (TJ = 25
oC, unless otherwise noted)
Parameter
Test
Conditions
Symbol
MBR8045(R)
MBR8060(R)
MBR8080(R)
MBR80100(R)
Unit
Repetitive peak reverse voltage
VRRM
45
60
80
100
V
RMS reverse voltage
VRMS
32
42
57
70
V
DC blocking voltage
VDC
45
60
80
100
V
Continuous forward current
TC ≤ 120
oC
IF
80
80
80
80
A
Surge non-repetitive forward
current, half-sine wave
TC = 25
oC
IFSM
1000
1000
1000
1000
A
Forward voltage
IF = 80 A
TJ = 25
oC
VF
0.65
0.75
0.84
0.84
V
Reverse current
VR = 20V,
TJ = 25
oC
IR
5
5
5
5
mA
VR = 20V,
TJ = 125
oC
250
250
250
250
Thermal & Mechanical Specifications (TJ = 25
oC, unless otherwise noted)
Parameters
Symbol
MBR8045(R)
MBR8060(R)
MBR8080(R)
MBR80100(R)
Unit
Maximum thermal resistance, junction to
case
Rth(JC)
1.0
oC/W
Operating junction temperature range
TJ
-65 to 150
oC
Storage temperature
Tstg
-65 to 175
oC
Mounting torque (non-lubricated threads)
F
4.0
Nm
Approximate allowable weight
W
17.0
g
DO-203AB (DO-5)


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