ACE3422B datasheet(2/6 Pages) ACE

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ACE3422B

N-Channel Enhancement Mode Field Effect Transistor

VER 1.3

Electrical Characteristics

(TA=25℃, unless otherwise specified)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V, ID=250uA

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=250uA

1.0

3.0

Gate Leakage Current

IGSS

VDS=0V,VGS=±20V

100

Zero Gate Voltage Drain Current

IDSS

VDS=60V, VGS=0V

Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=2.6A

100

VGS=4.5V, ID=2.8A

130

Forward Transconductance

gfs*

VDS=5V,ID=2.6A

Diode Forward Voltage

VSD

VGS=0V, ISD=1A

0.8

1.2

Maximum Body-Diode

Continuous Current

2.5

Switching

Total Gate Charge

VDS=30V, VGS=4.5V,

ID=2.6A

6.5

Gate-Source Charge

Qgs

2.2

Gate-Drain Charge

Qgd

2.7

Turn-On Delay Time

td(on)

VGS=10V, VDS=20V, RL=20Ω,

RGEN=1Ω,

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn- Off Rise Time

Dynamic

Input Capacitance

Ciss

VDS=30V, VGS=0V

f=1MHz

350

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate resistance

VGS=0V, VDS=0V, f=1MHz

1.4

Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment

with TA=25°C. The value in any given application depends on the user's specific board design.

B. Repetitive rating, pulse width limited by junction temperature.

C. The RθJA is the sum of the thermal impedence from junction to lead RθJA and lead to ambient.

The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The SOA curve provides a single pulse rating.

F. The current rating is based on the t

≤10s thermal resistance rating.

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