ACE4441B datasheet(2/6 Pages) ACE

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ACE4441B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

Electrical Characteristics

TA=25

OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-60

Zero Gate Voltage Drain Current

IDSS

VDS=-48V, VGS=0V

-1

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

100

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-4.5A

VGS=-4.5V, ID=-3.5A

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=-250µA

-1.0

-1.7

-2.5

Forward Transconductance

gFS

VGS=-10V, ID=-7A

Diode Forward Voltage

VSD

ISD=-1A, VGS=0V

-0.76

-1

Maximum Body-Diode Continuous

Current

-3

Switching

Total Gate Charge

VDS=-30V, ID=-7A

VGS=-10V

Gate-Source Charge

Qgs

2.5

Gate-Drain Charge

Qgd

Turn-On Delay Time

Td(on)

VDS=-30V, RL=10Ω,

VGS=-10V, RGEN=3Ω

Turn-On Rise Time

3.8

7.6

Turn-Off Delay Time

td(off)

31.5

Turn-Off Fall Time

7.5

Dynamic

Input Capacitance

Ciss

VDS=-30V, VGS=0V

f=1MHz

760

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Note: 1.

The value of R θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment

with TA=25°C. The value in any given application depends on the user's specific board design.

2. Repetitive rating, pulse width limited by junction temperature.

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

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