ACE4442B datasheet(2/6 Pages) ACE

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ACE4442B

N-Channel Enhancement Mode MOSFET

VER 1.2

Ordering information

ACE4442B XX + H

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-source breakdown voltage

V(BR)DSS

VGS=0V, ID=250µA

Zero gate voltage drain current

IDSS

VDS=20V, VGS=0V

µA

Gate threshold voltage

VGS(th)

VGS=VDS, IDS=250µA

0.3

0.8

Gate leakage current

IGSS

VGS=±12V, VDS=0V

µA

Drain-source on-state resistance

RDS(ON)

VGS=4.5V, ID=0.6A

300

360

mΩ

VGS=2.5V, ID=0.5A

240

420

VGS=1.8V, ID=0.4A

420

560

Forward transconductance

gFS

VDS=10V, ID=0.4A

Diode forward voltage

VSD

ISD=0.15A, VGS=0V

0.65

1.2

Switching

Total gate charge

VGS=4.5V, VDS=10V, ID=0.6A

1.06

1.38

Gate-source charge

Qgs

0.18

Gate-drain charge

Qgd

0.32

Turn-on delay time

td(on)

VGS=4.5V, VDS=10V

ID=0.5A, RG=1Ω

Turn-on rise time

Turn-off delay time

td(off)

110

Turn-off fall time

Dynamic

Input capacitance

Ciss

VGS=0V, VDS=10V, f=1.0MHz

Output capacitance

Coss

Reverse transfer capacitance

Crss

Note :

1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

2. Repetitive rating, pulse width limited by junction temperature.

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

KM : SOT-523

Pb - free

Halogen - free

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